Dual-gate-material-based device design for unipolar metal oxide semiconductor-like carbon nanotube field effect transistors一种基于双栅材料的单极性类金属氧... 由于导电沟道-源/漏电极界面处可能发生的载流子带间隧穿,传统类金属氧化物半导体(MOS)碳纳米管场效应管呈现双极性传输特性,极大影响了器件性能的提高及...
The dual-gate memory cells each include a memory device and an access device sharing a semiconductor layer, with their respective channel regions provided on different surfaces of the semiconductor layer. The semiconductor layer has a thickness such that a sensitivity parameter relating an electrical ...
Dual-gate device and method 专利名称：Dual-gate device and method 发明人：Andrew J. Walker 申请号：US11197462 申请日：20050803 公开号：US20070029618A1 公开日：20070208 专利内容由知识产权出版社提供 专利附图：摘要：A memory circuit having dual-gate memory cells and a method for fabricating such a...
A dual-gate device is formed over and insulated from a semiconductor substrate which may include additional functional circuits that can be interconnected to the dual-gate device. The dual-gate device includes two semiconductor devices formed on opposite surfaces of a common active semiconductor region...
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STRAPPED DUAL-GATE VDMOS DEVICE Semiconductor devices are described that include a dual-gate configuration. In one or more implementations, the semiconductor devices include a substrate having a first surface and a second surface. The substrate includes a first and a s... SJ Alberhasky,DE Hart,...
This trick new shifter features both a standard gated shift pattern and a "Hill Killer" shift gate pattern that was designed to be used as a safety device when attempting steep hill climbs. This is done by dropping the shifter down into the lower Hill Killer shift gate, which eliminates ...
An equivalent capacitance model of the device structure-1 and 2 has also been drawn in Fig.2. Here,xis the channel direction and,yis perpendicular to the channel. The channel region is divided into three parts, regions at both the source (L1) and the drain side (L3) work as cavity, ...
具有阶梯掺杂缓冲层的双栅超结 LDMOS To further optimize device performance, a dual-gate silicon-on-insulator (SOI) -based SJ-LDMOS (DG SDB SJ-LDMOS) device structure was proposed with a... 唐盼盼,张峻铭,南敬昌 - 《Electronic Components & Materials》 被引量: 0发表: 2024年 加载更多研究...
The conversion of light into electrical signal in a photodetector is a crucial process for a wide range of technological applications. Here we report a new device concept of dual-gate phototransistor that combines the operation of photodiodes and phototr