(nC) ID (A) Configuration 30 0.00243 0.00351 9.5 125 a Dual FEATURES • TrenchFET® Gen V power MOSFET • Symmetric dual N-channel • Flip chip technology optimal thermal design • High side and low side MOSFETs form optimized combination for 50 % duty cycle • Optimized RDS - ...
In this work, symmetric Dual-Material Double Gate Fully-Depleted SOI MOSFET has been analyzed. The analytical model for the MOSFET's electrical parameters (such as potential distribution, electric field distribution, electron velocity distribution, sub-threshold swing, threshold voltage, device ...
The conventional planar bulk MOSFET is difficult to scale down to sub-20nm gate length, due to the worsening performance variability and short channel effe... N Xu - Dissertations & Theses - Gradworks 被引量: 5发表: 2012年 FIELD EFFECT TRANSISTOR WITH RAISED SOURCE/DRAIN FIN STRAPS Therefore...
An equivalent capacitance model of the device structure-1 and 2 has also been drawn in Fig.2. Here,xis the channel direction and,yis perpendicular to the channel. The channel region is divided into three parts, regions at both the source (L1) and the drain side (L3) work as cavity, w...
2. Symmetric Duty-Cycle Modulation Method 2.1. Three-Phase Dual-Active-Bridge Converters Figure 1 shows the circuit diagram of a DAB3 converter. Conventionally, the single-phase shift (SPS) technique is used to modulate the converter. According to [11], the soft-switching area of the converter...
Traditionally, it is usually assumed that the series inductances of all three phases of the DAB3 converter are symmetric to simplify the analysis. However, according to [19], these inductances are dependent on the core parameters and the distance between the primary and secondary windings. In ...
16.The PCI-X DDR system as claimed in claim 11, wherein the driver control enables selected ones of the groups of both P-channel and N-channel devices for providing symmetric termination. 17.The PCI-X DDR system as claimed in claim 16, wherein the transmission line includes a transmission...
Since the current waveform is symmetric, the currents at these points are equal to –i1 and –i2. Neglecting output capacitance of the MOSFETs, the ZVS range can derived by setting equations Equation 9 and Equation 10 to zero and solving for φ. This gives the minimum required phase shift...
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Ray, B., Mahapatra, S.: Modeling of channel potential and subthreshold slope of symmetric double-gate transistor. IEEE Trans. Electron Devices 56, 260–266 (2009) Article Google Scholar Cerdeira, A., Estrada, M., Alvarado, J., Kilchytska, V., Flandre, D.: Improved modeling of gate ...