This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Feature(s) Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant ...
ESD Diodes (Y|N)No |IDS| @TA= +25°C (A)10 PD@TA= +25°C (W)1.42 PolarityN+N Compliance (Only Automotive supports PPAP)Automotive (Q) QGTyp @ |VGS| = 10V (nC)10.5 QGTyp @ |VGS| = 4.5V (nC)5 QGTyp @ VGS= 5V(nC)N/A ...
产品种类: MOSFET RoHS: 是 安装风格: SMD/SMT 封装/ 箱体: SO-8 通道数量: 2 Channel 晶体管极性: N-Channel Vds-漏源极击穿电压: 30 V Id-连续漏极电流: 7.1 A Rds On-漏源导通电阻: 28 mOhms Vgs - 栅极-源极电压: 20 V 最小工作温度: - 55 C 最大工作温度: + 150 C...
通道模式 Enhancement 配置 Dual 高度 1.1 mm 长度 2.9 mm 产品 MOSFET Small Signal 系列 NDC7001C 晶体管类型 1 N-Channel, 1 P-Channel 宽度 1.6 mm 商标 ON Semiconductor / Fairchild 下降时间 8 ns, 10 ns 产品类型 MOSFET 上升时间 8 ns, 10 ns 工厂包装数量 3000 子类别 MOS...
JMTG28DN10D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features 100V,4.5A RDS(ON)< 295mΩ @ VGS =10V RDS(ON)< 330mΩ @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load...
Dual N-Channel Enhancement Mode MOSFET TBL1012DW Features N-Channel switch with low RDS(on) Operated at low logic level gate drive HBM: AEC-Q101-001: H2 (JESD22-A114-B: 2) RoHS compliant with Halogen-free Qualified to AEC-Q101 Standards Typical Applications ...
SPN8205W-Dual N-Channel Enhancement Mode MOSFET 价格:0.40元 最小采购量:3000 主营产品:电源IC 擎力 绿达,晶镁晶豪ESMT/EMP,亚瑟莱特Axelite,华润矽威 远翔,FP6101 FP6102,EUP8207 EUP2573,PT1102 PT1101 PT1102,PT4101 PT4103 PT1301,PT1301 PT4107,PT4201 PT4207,AX2002 AX2003,AX2535 AX5523,AX...
100V Dual N-Channel Enhancement Mode Power MOSFET Fetures Applications Diode power Wayon-WMB02DN10T1 WMB02DN10T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance and yet maintain superior...
JMTP3010D Description JMT Dual N-channel Enhancement Mode Power MOSFET Features 30V, 12A RDS(ON)<12mΩ @ VGS =10V RDS(ON)<18mΩ @ VGS =4.5V Advanced Trench Technology Provide Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load ...
DMN1025UFDB N+N N+N Y 12 10 6.9 - 25 30 38 1 - - 12.6 U-DFN2020-6 Type B 封装尺寸图 Datasheet DMN1025UFDB dual n-channel enhancement mode mosfet DMN1025UFDBProducts 产品服务 微处理器 电源管理芯片 存储器 放大器和线性器件 接口 开关与多路复用器 时钟 数据转换器 Manufacturers 生产厂家...