dualgate比singlegate功耗小的原因主要有以下几点:1、dualgate具有更低的功耗,因为它采用了双栅极技术,这种技术可以有效减少电路的功耗。2、dualgate可以实现更高的频率。由于它采用了双栅极技术,因此可以提高电路的速度,从而实现更高的频率。3、dualgate可以改善电路的可靠性。由于双栅极技术可以有效减少电路的功耗,因此...
In accordance with the present invention, the nFET and the pFET both include at least a single gate metal and the nFET gate stack is engineered to have a gate dielectric stack having no net negative charge and the pFET gate stack is engineered to have a gate dielectric stack having no net...
In this study, electrical behaviour of dual-gate (DG) and single-gate (SG) organic thin film transistors (OTFTs) is investigated using Atlas two-dimensional (2D) numerical device simulation. Compared with the SG, DG organic transistor shows improved performance because of the presence of two ch...
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非隔离型低边栅极驱动Single-channel and dual-channel low-side gate driver ICs to control MOSFETs and IGBTs EiceDRIVER™ low-side gate driver ICs utilize low-voltage circuitry with the robust technology of high-voltage gate drivers and the state-of-the-art 0.13 µm process. Our world-class...
Infineon offers single-low-side and dual-low-side gate driver ICs with flexible options for output current, logic configurations, packages, and protection features such as under-voltage lockout (UVLO), integrated overcurrent protection (OCP), and truly differential inputs (TDI). Low-side gate dri...
1 W to 12 W output power Qi 1.1 and PMA wireless standard communication protocols Integrated high efficiency synchronous rectifier 800 kHz programmable step-down converter with input current and input voltage regulation loops Step-down converter efficiency up to 90% ...
This letter investigates its potential as a CMOS substrate that would enable single workfunction metal-gate electrode technology. Simulation shows that a single metal electrode with workfunction of 4.5 eV produces near-ideal CMOS performance on a dual-channel layer substrate that consists sequentially ...