双底栅双壁碳纳米管场效应晶体管的构建和特性研究 www.ilib.cn 2. Computer Simulation of Double-gated Field Emission Cathode 双门聚焦结构场发射阵列阴极的计算机模拟 www.ilib.cn 3. Detection of infrared point targets based on double-gated filter 基于双门滤波的红外点目标检测方法 ilib.cn隐私...
The first gate dielectric includes a ferroelectric dielectric. In an embodiment, a memory cell includes this FeFET, with the first gate electrode being electrically connected to a wordline and the drain region being electrically connected to a bitline. In another embodiment, a memory array includes...
Memory cells are constructed from double-gated four terminal transistors having independent gate control. DRAM cells may use one, two or three transistors. Single transistor cells a
in double-gated graphene, the proton current can be used to perform logic operations, which is of interest in the field of electrochemically gated electronic materials36,37. We have shown that field
1.A semiconductor memory cell, comprising:a substrate;a substrate dielectric disposed on the substrate;an Independently-Double-Gated (IDG) Hysteresis Field Effect Transistor (HyFET); andan Independently-Double-Gated (IDG) Field Effect Transistor (FET),wherein the IDG HyFET includesa bottom gate di...
Electrical engineering Analytical and compact modeling of highly asymmetrical independent double -gated transistors TENNESSEE TECHNOLOGICAL UNIVERSITY Stephen Parke JeediguntaManjeeraRecent research has focused on dynamic and flexible threshold multi-gate transistors that enable ultra-low-power (ULP) and ...
Double-gated graphene devices provide an important platform for understanding electrical and optical properties of graphene. Here we present transport measurements of single layer, bilayer and trilayer graphene devices with suspended top gates. In zero magnetic fields, we observe formation of pnp junctions...
In order to control electric field relaxation at the tips of practical emitters, we found that volcano-structured double-gated field emitter arrays (VDG-FEAs) could be improved by placing the focusing electrode 470 nm below the electron extraction electrode. We demonstrated that this approach enables...
A New Charge-Pumping Technique for a Double-Gated SOI MOSFET Using Pulsed Drain Current Transients 来自 国家科技图书文献中心 喜欢 0 阅读量: 68 作者:S Kim,SJ Choi,DI Moon,YK Choi 摘要: A novel interface characterization technique is proposed to extract interface trap density $N_{rm it}$ in...
Structure and method of making double-gated self-aligned finfet having gates of different lengthsA gated semiconductor device is provided, in which the body has a first dimension extending in a lateral direction parallel to a major surface of a substrate, and second dimension extending in a ...