etchingX-ray photoelectron spectroscopyscanning electron microscopyIn this study, we investigated the etching characteristics of TiN thin film and the selectivity of TiN to SiO 2 in an inductively coupled CF 4/BCl 3/N 2 plasma system. The dry etching mechanism of TiN thin films was studied by ...
The etching characteristics of InGaAlAs alloys lattice-matched to InP were investigated using low pressure (1 mTorr) electron cyclotron resonance CH4:H2:Ar or CCl2F2:Ar discharges with additional radiofrequency biasing of the samples. Using CCl2F2:Ar discharges with ≥250V negative bias it is ...
2022, Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films High-density plasma etching characteristics of aluminum-doped zinc oxide thin films in Cl<inf>2</inf>/Ar plasma 2020, Materials Research Express Selective dry etching of TiN nanostructures over SiO<inf>2</inf> nanotre...
MEMS Industry-Worth Etching to Fabricate Tapered Structures in SiO2 The experiment was designed in an industrial inductively-coupled plasma reactive ion etching tool, wherein a two-step etching process was developed for ... V Bliznetsov,B Li,JW Lee,... - 《Journal of Microelectromechanical Syste...
Dry etchingcharacteristics of TiN film have been studied in the case of using Ar/CHF 3 , Ar/Cl 2 , and Ar/BCl 3 chemistries in an inductively coupled plasm... J Tonotani,T Iwamoto,F Sato,... - 《Journal of Vacuum Science & Technology B Microelectronics & Nanometer Structures Processing...
Dry Etch Characteristics of TiN Thin Film for Metal Gate Electrode We investigated the dry-etching mechanism of the TiN thin film using a /Ar inductively coupled plasma system. To understand the effect of the /Ar gas mixing ratio, we etched the TiN thin film by varying /Ar gas mixing ratio...
The opening of 0.5μm wide emitter windows in the base oxide to fabricate quasiselfaligned poly emitter bipolar transistors involves a dry oxide etching. This paper shows how appropriate post-etch cleaning substantially improves the base current characteristics and the emitter resistance of poly emitter...
Dry etching and its effect on the characteristics of submicron feature-size PbZrTiO(PZT) capacitors with PtOtop electrode were investigated. The photoresist (PR)-masked PtOfilms were etched by an Ar/(20%)Cl/Ohelicon wave plasma. A fence-free pattern with a significantly high etch rate and si...
A method of forming a pattern of a transparent conducting film such as an indium tin oxide film, formed on the surface of a substrate including Si and being heated. A two-step etching method is employed, in which the transparent conducting film is wet-et
Disclosed is a method of dry-etching a sample (e.g., a wafer) having an aluminum system film structure to be etched. Etching is performed in a plasma, under reduced pressure, the plasma being formed f