对于MOSFET而言,第三把交椅是导通电阻(Drain-source on-state resistance,RDS(on))。 导通电阻(Drain-source on-state resistance,RDS(on))与电流(Continuous Drain Current ,ID)在此一起讨论,听笔者巴拉巴拉如下。 电流在数据表中多次出现,详如下: 1、电流(Continuous Drain Current ,ID), 测试条件:壳温为定值(...
A novel approach is presented in order to study the effects of carrier generation on the drain-source current of graphene nanoscroll field effect transistors (GNSFET). In this method, ionisation carrier concentration is calculated and included in the drain-source current....
网络漏源电阻;漏极-源极电阻
Quarter-Micrometer Low-Noise Pseudomorphic GaAs HEMT's with Extremely Low Dependence of the Noise Figure on Drain-Source Current Wenger "Quarter-micrometer low-noise pseudomorphic GaAs HEMTs with extremely low dependence of the noise figure on drain-source current", IEEE ... J Wenger - 《IEEE ...
Drain Current(漏电流)是电子元件或电路中非预期流动的电流,对电路性能有重要影响。 一、概述 漏电流,即Drain Current,是电子领域中一个重要的参数。它指的是在电子元件或电路中,从特定端点(如晶体管的漏极)非预期地流向另一端点(如源极)的电流。在集成电路中,它可能特指IDD(Input D...
Drain-Source Leakage Current 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 漏源漏电流 翻译结果2复制译文编辑译文朗读译文返回顶部...
美 英 un.漏源电压 网络漏极-源极电压;闸源级压降 英汉 网络释义 un. 1. 漏源电压 释义: 全部,漏源电压,漏极-源极电压,闸源级压降
9 RegisterLog in Sign up with one click: Facebook Twitter Google Share on Facebook S/D (redirected fromSource/Drain) AcronymDefinition S/DShutdown S/DSolvent/Detergent S/DSource/Drain S/DSystem Description S/DSame Difference S/DSystolic/Diastolic ...
structure as a gate; current flows in the channel betweensourceanddrain;channel is created by applying adequate potential [...] cscleansystems.com cscleansystems.com 金属氧化物半导体场效应晶体管;是一种带有 MOS 结构作为栅的场效应晶体管;电流在源和漏之间的沟道中流动;沟道是通过在栅接面应用足够的...
(off) Tf VDD = 10V, ID = 4A, VGS = 4.5V, RGEN = 25Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ciss Coss Crss VDS = 8V, VGS = 0V, f =1.0MHz Max.Diode Forward Current Is Diode Forward Voltage VSD IS = 1.7A,VGS = 0V Typ Max Unit ...