Drain-Source Leakage Current 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 漏源漏电流 翻译结果2复制译文编辑译文朗读译文返回顶部...
In this work the influence of gold deposition parameters such as substrate temperature and nominal contact thickness on the drain-source leakage current in top-contact pentacene-based thin-film transistors (TFTs) is investigated. The results reveal that the drain-source leakage current can be ...
This paper investigates the impact of ion implantation and annealing conditions during source/drain extension formation on leakage current behavior of boron/phosphorous diodes of PFET transistors. Analyzing the leakage current it is difficult to distinguish between the influence of the increased electric ...
confinement of carriersfromsourcetodrain,thicker gate dielectric reducing gate leakage current, [...] stericsson.com stericsson.com 功耗更低:有多个因素促使功耗降低:全耗尽沟道消除了漏极引起的寄生效应,在低 功耗模式,可更好地限制载流子从源极流向漏极;更厚的栅电介质层可降低栅极泄漏 电流;更好地控制体...
The investigated N-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (power VD MOSFET) suffered a drain-to-source current leakage ( $IDSS$ leakage). The leakage was caused by the dislocations located mainly in the N+ source area in the vicinity of the edge...
Re: OFF state drain_source leakage current in PFET «Reply #1 on:December 02, 2020, 06:00:24 pm » It does. Refer to the table on page 2 of the data sheet, row 8, "Zero gate voltage drain current". Logged The following users thanked this post:opampsmoker ...
The principal difference between asymmetric and symmetric source-drain MOSFETs is the drain-side structure. The asymmetric source-drain MOSFET has a lightly-doped drain for a low electric field. As a result, the gate-induced drain leakage (GIDL) current is reduced, and the hot carrier ...
Because of the existence of the spaced regions that we propose in advance, such design can avoid overlap between a gate and lightly doped drain/source regions. Consequently, the method provided in the present invention can decrease the problem of gate-induced-drain-leakage current....
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
The drain junction doping dependency of the GIDL current in the same transistor with the change of source and drain terminal is discussed. And the body bias effect for the GIDL current is studied in terms of the band to band tunneling (BTBT) of electrons in the reverse-biased channel-to-...