Drain-Source Leakage Current 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 漏源漏电流 翻译结果2复制译文编辑译文朗读译文返回顶部...
confinement of carriersfromsourcetodrain,thicker gate dielectric reducing gate leakage current, [...] stericsson.com stericsson.com 功耗更低:有多个因素促使功耗降低:全耗尽沟道消除了漏极引起的寄生效应,在低 功耗模式,可更好地限制载流子从源极流向漏极;更厚的栅电介质层可降低栅极泄漏 电流;更好地控制体...
Source 3-Lead Plastic TO-252 Package Code: D Pin 1: Gate Pin 2: Drain Pin 3: Source 2D Series Symbol: 1 G 3S ■ 最大额定 Absolute Maximum Ratings(TC=25℃) 参数 PARAMETER 漏-源电压 Drain-source Voltage 栅-源电压 gate-source Voltage 漏极电流 Continuous Drain Current8 TC=25℃ TC=100...
大量的泄极(drain-source)电压下 … www.52rd.com|基于2个网页 3. 汲源极间 ...emiconductor FET)是以何种效应控制汲源极间(drain-source)电流: (A)磁场 (B)电场 (C)光电 (D)电流 (E)崩溃效应。 content.edu.tw|基于 1 个网页 更多释义 例句...
junction leakageembedded source/drain regionsselective epitaxial growthstrain engineeringThis work investigates the impact of various processing parameters on the leakage current of in situ P-doped Si 1 xC x embedded source/drain (S/D) junctions, i.e., the carbon content x (%) and the thermal ...
This paper investigates the impact of ion implantation and annealing conditions during source/drain extension formation on leakage current behavior of boron/phosphorous diodes of PFET transistors. Analyzing the leakage current it is difficult to distinguish between the influence of the increased electric ...
The source/drain junction leakage currents of lightly doped drain (LDD) MOSFET for various gate sidewall spacer materials have been measured and analyzed. Since the step coverages of spacer materials and the etch rates of field oxide during the gate sidewall spacer etch process are different, the...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
Because of the existence of the spaced regions that we propose in advance, such design can avoid overlap between a gate and lightly doped drain/source regions. Consequently, the method provided in the present invention can decrease the problem of gate-induced-drain-leakage current....
In this work, we propose the concept of achieving a lower off-current in organic thin film transistors (OTFTs) by asymmetric source/drain with low and high work-function metals. The artificial hole barrier height (h-BH) at the drain-channel junction formed by this method prevents hole carrie...