以双扩散MOS晶体管为基础的电路,简称DMOS。利用两种杂质原子的侧向扩散速度差,形成自对准的亚微米沟道,可以达到很高的工作频率和速度。 图中a是横向DMOS晶体管(简称LDMOS),图b是垂直DMOS晶体管(简称VDMOS)。LDMOS是平面型的,三个电极都由上表面引出,适合于与其他器件集成。源扩散是自对准的,而栅金属层则与漏扩散...
A method of forming an integrated DMOS transistor/EEPROM cell includes forming a first mask over a substrate, forming a drift implant in the substrate using the first mask to align the drift implant, simultaneously forming a first floating gate over the drift implant, and a second floating gate...
1) double diffused mos fet dmos场效应晶体管 例句>> 2) field effect transistor 场效应管场效应晶体管 3) field effect transistor 场效应晶体管场效应管 4) field-effect transistor 场效应晶体管,场效应管 5) field-effect transistors 场效应晶体管 1. Conducting polymers have attracted particula...
Double diffused MOS field-effect-transistor and process for its manufacture A diffused MOS (DMOS) device and method for making same are disclosed. The prior art DMOS device is improved upon by ion implanting a depletion extension L.sub.D to the drain. However, the introduction of the ...
Double diffused MOS transistor and method for manufacturing same A method of manufacturing a semiconductor device, such as a double-diffused metal oxide semiconductor (DMOS) transistor, where a first layer may be formed ... HS Shin,SC Lee 被引量: 0发表: 2005年 ...
Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI...
Double diffused MOS device and method 优质文献 相似文献 参考文献 引证文献Semiconductor device having double diffused MOS transistors with varied on/off threshold voltages, and method of manufacturing the same A semiconductor device where a plurality of DMOS transistors formed in a distributed manner on...
6,222,233, entitled “Lateral RF MOS Device with Improved Drain Structure,” discusses a lateral DMOS with an enhanced drift region. Referring to FIG. 2, there is an enhanced drift region (under region 416) which just touches the DMOS body (422) of the LDMOS device. This device concept ...
发明人: M Stecher,T Krotscheck,D Vietzke,W Schwetlick,A Mair,K Mosig,R Grilz,D Kotz,H Peri 摘要: A semiconductor component, with a region (22) for creating a drift field (E1, E2) from an underlying substrate (21) and from an overlying semiconductor layer (2) towards the region,...
The double-diffused MOS structure as shown above was one of the earlier successful efforts in the application of short-channel MOSFET technology. The name “DMOS” comes from the smanner of sequence in which the p- doped substrate is first diffused and later followed by highly doped n+source...