4H–SiCDouble trenchMOSFETIntegrated Schottky barrier diodeInverted-T grooveIn this letter, we propose an improved 4H鈥揝iC double trench MOSFET with Inverted-T groove and integrated Schottky barrier diode (ITSBD-MOS). The device features an Inverted-T groove beneath the gate electrode and the ...
工艺+器件仿真助力SiCTrench MOSFET模型的开发 的功率密度和工作频率。Trench MOSFET采用腐蚀挖沟槽的方法将平面型VD-MOSFET的“T”字形导电通路缩短为两条平行的垂直型导电通路,起到了去除两相邻PN结间的JFET电阻作用,从而减小了器件的导通电阻;同时,Trench MOSFET可有效抑制源极短路问题,减小PN结电 2021-10-15 14...
A novel SiC double-trench MOSFET (DT-MOS) with embedded MOS-channel diode is proposed and investigated via TCAD simulations in this article. The parasitic body diode is free from activation when the device serves as a freewheeling diode, thus completely eliminating the bipolar degradation. Moreove...
Theoretical analysis and design of double implanted MOSFET on 6H silicon carbide wafer for low power dissipation and large breakdown voltage This paper analyses the device structure of a 6H-SiC vertical double-implanted MOSFET (DIMOSFET) in order to provide a high breakdown voltage of about 10 k...
MOSFETavalanche energyTDDBThe trench gate structure MOSFET, with its lack of JFET resistance, is one of the structures able to achieve low on-state resistance [1,2]. In 2008, this group succeeded in fabricating 790V SiC trench MOSFETs with the lowest R_(on,sp) (1.7 m惟cm~2) at room ...
SiC double-trench MOSFETsSingle-event burnoutHeavy-ion irradiationGate oxide damageThis article presents the experimental results of the heavy-ion-induced gate oxide damage and single-event burnout (SEB) in 1200 V SiC double-trench MOSFETs. The short-circuit between any two terminals of devices ...
At 3rd quadrant, Silicon Superjunction MOSFET causes large switching loss due to its long reverse recovery process, while SiC Double trench MOSFET and CoolSiC MOSFET show stable performance with temperature variation due to the negligible reverse recovery charge.Juefei Yang...
SiC double-trench MOSFETRepetitive overcurrent switching stressElectrons injectionRuggednessIn this paper, the ruggedness of 650V SiC double鈥搕rench MOSFETs (DT-MOS) under repetitive overcurrent switching stress was evaluated and investigated experimentally. The devices under test (DUTs) were electrically...
UMOSFETSilicon carbide (SiC) trench MOSFETs, or UMOSFETs, generally exhibit lower specific on-resistance than planar DMOSFETs due to a more compact unit cell, higher electron mobility on the a-face surface, and the absence of a JFET region. In this paper we compare the performance of two ...
A 1200V-class Ultra-low Specific On-resistance SiC Lateral MOSFET with Double Trench Gate and VLD Techniquedoi:10.1109/JEDS.2021.3136341Moufu KongZewei HuJiacheng GaoHongqiang Yang