The double-gate TFT substrate and the production method thereof are used for producing TFT substrates.张继栋徐宇博李成薛海林CN102566166A * Dec 22, 2010 Jul 11, 2012 北京京东方光电科技有限公司 一种双栅的tft基板及其制造方法
3D RESURF double-gate MOSFET
STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFTa—SiTFT复合栅绝层用阳极氧化Ta2O5的研究半导体铝钛合金栅硅栅器件α-硅TFT本文报道一种低阻高化学稳定的Al:Ti合金的制备方法及其在a-SiTFT中的应用.所获Al:Ti合金电极材料的电阻率可达6.6μΩ·cm,与纯铝的相近.Ti的加入使Al:Ti合金...
The optimized HIZO/IZO TFTs exhibited improvement in both the field-effect mobility and NBIS stability compared to those of the single-channel devices. The authors also reported the superior mobility and gate bias stability of ZTO/ITO double-channel devices19. Nevertheless, these studies did not ...
1(a) (using bottom gate, VG > 0), and the schematic diagram of water-gated MoS2 transistor is shown in Fig. 1(b) (using top gate, VG > 0), respectively. As shown in Fig. 1(c), the thickness of as-fabricated MoS2 flake was estimated to be ∼25 nm from profile ...
9, where a cold atomic system is placed in contact with two different thermal reservoirs, we consider a slight modification in which the gate potential separating the two reservoirs is replaced by a double well potential loaded with a Bose-Einstein condensate (BEC), itself a system of vast ...
LCR-T10H TFT LCD Display Multimeter Transistor Tester Diode Triode Capacitor Resistor Test Meter MOSFET NPN PNP Triac MOS TesterUSD 12.59/piece The package in the picture you click to pay is the product you will receiveNotice:1. Before using the device to measure the capacitor, please discharge...
1. We fabricated bottom-gate-inverted Si-IZO TFTs on heavily doped n-type Si substrates, on which 150-nm-thick silicon dioxide (SiO2) was grown by dry oxidation, where the Si substrate was used as a gate electrode. Four channel types were studied. The corresponding devices are labeled A...
When merging occurs at the interface, the gate capacitance of the potential well suddenly increases, leading to an abrupt shift of the tunneling current peak to lower gate voltages. This is due to the decrease of the system's charging energy, as confirmed by Coulomb blockade simulations. These...
High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al鈧侽鈧 Gate Dielectric Enabled by a Novel Atomic Layer Deposition MethodIEEE Journal of the Electron Devices Society (IF 2)Pingping Li, Jun Yang, Xingwei Ding, Xifeng Li, Jianhua Zhang Pub Date: 2024-01-12 Low-Voltage Operated Hig...