Low polarizable B2O3-SiO2-Si3N4 glass systems were investigated as regards the low dielectric constant and dielectric loss. The experimental data showed that the low dielectric constant epsilon and the molar polarizability alpha(m) were equivalent, when using Clausius Mosotti's equa...
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Preparation and Properties of Porous Si3N4/SiO2/BN Composite Ceramics Porous Si3N4/SiO2/BN composite ceramics with high strength and low dielectric constant were prepared by dry-pressing process and pressureless sintering at ... W Dong,CA Wang,L Yu,... - 《Key Engineering Materials》 被引量...
For application as electromagnetic wave transparent windows, h-BN and Si3N4 have proven to be relatively good reinforcement materials, since they both have relatively low dielectric constant (~5) and low loss tangent (~10−4) at room temperature. Show abstract Preparation and properties of ...
The effect on the waveguide properties ofSiO2,Si3N4,As2S3, andGe0.25Se0.75used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance....
采用光学传递矩阵方法设计了紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜,并利用等离子体增强化学气 相沉积技术在蓝宝石(0001)衬底上制备了SiO2/Si3N4介质膜分布式布拉格反射镜.光反射测试表明,样品反射谱 的峰值波长仅与理论模拟谱线相差10nm,并随着反射镜周期数的增加而蓝移.由于SiO2与si3N4具有相对较大的 折射率比...
Dielectric properties of Si3N4–SiC/SiO2 in X-band from 25 to 600 °C were investigated. Due to the special designed structure, the effective permittivity of Si3N4–SiC/SiO2 increases slightly with rising temperature. When the temperature increases from 25 to 600 °C, average \( \varepsilon...
Si3N4 and SiO2/Si3N4 composite films have dielectric constant values of 7 or less. The storage node and cell plate electrodes are also referred to as first and second electrodes. [0004] Unfortunately high dielectric constant materials are incompatible with existing processes and can not be ...
A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remaind...
(MOS) system, the breakdown of insulator in EOS system is observed and its potential,Vdb, depends on the type of dielectric material.Vdbof the Si3N4, remains constant regardless of the monovalent metal ions investigated in this work. On the other hand, the most widely used insulator, SiO2,...