Dielectric constant, lowFilms, SiO2, C, FStabilityCommunications: Dielectric constants and breakdown strengths of deposited films become increasingly lower, respectively higher, as more C4F8 is added to the feed gas in plasma-enhanced CVD of C,F-doped silica from Si(OC2H5)(4). This is in ...
The electronic and ionic contributions to the overall dielectric constant of fluorinatedSiO2films deposited inSiF4andO2plasmas were quantified from the refractive index measured byin situspectroscopic ellipsometry in the visible-to-UV range and the infrared spectra taken byin situattenuated total reflection...
Fluorine doped oxide (SiO2-xFx) films have been found to exhibit a low dielectric constant. However, the critical issue about SiO2-xFx is its low resistance to moisture which causes the dielectric constant of the film to increase with time. In this work, N2O and NH3 plasma post treatments ...
The real part of the frequency-dependent dielectric function 1(ω) and the light-absorption coefficient α(ω), of Si slabs confined within SiO2 barriers have been calculated as a function of Si-slab thickness dsi. The calculation uses the imaginary part 2(ω) of the dielectric function obtain...
An anomaly in the dielectric constant of a single crystal of CrOin the neighborhood of the N茅el temperature is studied with and without external magnetic fields up to a maximum value of 19 kOe. It is observed that the absolute value of ... HB Lal,R Srivastava,KG Srivastava - 《Physical...
ee 0/dBG, where e is the dielectric constant of SiO2 ( $ 4), e 0 is the permittivity of free space and dBG is 300 nm. This results in a very low gate capacitance CBG ? 1.2 ? 1028 F cm22. Therefore, for a typical value of n ? 1 ? 1013 cm22, the potential drop is f ?
A flexible insulator of a hollow SiO2 sphere and polyimide hybrid for flexible OLEDs The fabrication of interlayer dielectrics (ILDs) in flexible organic light-emitting diodes (OLEDs) not only requires flexible materials w...
At the level of 15 wt% SiO2 addition, the composites can be densified at a sintering temperature of 650°C for 30 min, and showed the optimal dielectric properties at 1 MHz with the dielectric constant of 6.1 and the dielectric loss of 1.3 × 103, which demonstrates a good potential for...
By using complex numbers for the dielectric constant, we can specify the magnitude and phase. The values of the real part ε′ and imaginary part ε″ are related to the stored energy and the dissipation of energy within the medium, respectively. When surface plasmons exist, the real part of...
The dielectric constant of tetraethylorthosilicate (TEOS)/O3 chemical vapor deposited silicon dioxide ( TEOS/O3-NSG) ranges, within the extent of this work, from 4 to 6, depending on both the deposition conditions and the substrate material. Although their influences on the dielectric constant are...