Dielectric constant, lowFilms, SiO2, C, FStabilityCommunications: Dielectric constants and breakdown strengths of deposited films become increasingly lower, respectively higher, as more C4F8 is added to the feed gas in plasma-enhanced CVD of C,F-doped silica from Si(OC2H5)(4). This is in ...
It is found that a small amount of SiO2 improves the flexural strength, the microhardness and the dielectric constant of the sintered PZFNTU ceramics. It is also found that the fracture mode changes from intergranular to essentially transgranular with the small amount of SiO2. For large amount ...
Dielectric constant of ultrathin SiO2 film estimated from the Auger parameter - art. no. 195313 The dielectric constant epsilon of ultrathin (0.55-7.96 nm) SiO2 films formed on a Si(001) substrate was characterized in terms of the modified Auger param... K Hirose,H Kitahara,T Hattori - 《...
The real part of the frequency-dependent dielectric function 1(ω) and the light-absorption coefficient α(ω), of Si slabs confined within SiO2 barriers have been calculated as a function of Si-slab thickness dsi. The calculation uses the imaginary part 2(ω) of the dielectric function obtain...
ParameterSiO2La2O3HfO2 Dielectric constant, k 3.9 27 24 Conduction band offset, ΔEC (eV) 3.5 2.3 1.5 Valence band offset, ΔEV (eV) 4.4 2.6 3.4 Electron effective mass, me∗ 0.40 0.26 0.68 Hole effective mass, mh∗ 0.33 0.50 0.29 Direct tunneling thickness (nm) 3.0 4.6 3.5 (3)...
ee 0/dBG, where e is the dielectric constant of SiO2 ( $ 4), e 0 is the permittivity of free space and dBG is 300 nm. This results in a very low gate capacitance CBG ? 1.2 ? 1028 F cm22. Therefore, for a typical value of n ? 1 ? 1013 cm22, the potential drop is f ?
For example, pure ice has a dielectric constant of 3.2 and loss factor of 0.003 at 0 °C while liquid water at the same temperature has an ε′ of 79 and an ε″ of 21. As can be seen in Figures 1 and 2, the higher the moisture content, more dramatic the change in dielectric ...
Sugahara, et al., Low Dielectric Constant Carbon Containing SiO2 Films Deposited by PECVD Technique Using a Novel CVD Precursor, Feb. 10-11, 1997 DUMIC Conference, 1997 ISMIC-222D/97/0034, 19-25. Tamura, et al., Preparation of Stable Fluorine-Doped Silicon Oxide Film by Biased Helicon...
The effect of a constant external electric field on the transverse dielectric constant of a semiconductor is calculated. The field produces a sharp decrease in the dielectric constant close to the threshold for an interband transition. Above the edge, the behavior is oscillatory. Numerical results ...
Simultaneous presence of PbO and BaO in the initial glass composition reduces the yield of ferroelectric phase. Dielectric properties have been interpreted in terms of microstructural features. Keywords Glass ceramics ferroelectric dielectric constant ...