The dielectric constant of tetraethylorthosilicate (TEOS)/O3 chemical vapor deposited silicon dioxide ( TEOS/O3-NSG) ranges, within the extent of this work, from 4 to 6, depending on both the deposition conditions and the substrate material. Although their influences on the dielectric constant are...
The fluorine doped TEOS films obtained using an inorganic gaseous dopant source (SiF4) and an organic liquid dopant source (TEFS) are described. The stability of fluorine in these films is strongly dependent on process conditions. The limit of stability for the most stable films is described. ...
plasma deposited films either from silane (SiH4)/oxygen or TEOS reactions, or more recently, SiO2films deposited by high density plasma chemical vapor deposition. The fixed dielectric constant of these deposited materials can range anywhere
substrate, wherein the insulation layer comprises the metal or metal-containing compound, oxygen, and silicon such that the dielectric constant of the insulation layer is greater relative to an insulation layer formed of silicon dioxide, and wherein the insulation layer comprises metal-oxygen-silicon...
Copper is expected to alleviate the resistance problem for next few generations, the capacitance problem is expected to be alleviated by reducing the dielectric constant of intermetal dielectric that isolated conducting lines from each other... H Zhou 被引量: 0发表: 2002年 加载更多研究...
The dielectric constant of SiC Not Available D Hofman,JA Lely,J Volger - 《Physica》 被引量: 24发表: 1957年 Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2 Amorphous SiCOF films with high carbon concentration are prepared by PECVD (plasma-en...
Typical insulating or dielectric materials14and16include silicon dioxide (SiO2) phosphosilicate glass (PSG), boron doped PSG (BDPSG) or tetraethylorthosilicate (TEOS), and more typically low-k dielectrics having a dielectric constant of less than 3.9 such as SILK (available from Dow Chemical), SiC...
作者: I Avigal 摘要: The properties of plasma-enhanced CVD boron phosphorus silicate glass (Plasma BPSG) are reviewed in relation to their potential use as an intermetal dielectric (mainly silicon to aluminum), and as a top passivation layer. 被引量: 27 年份: 1983 收藏...
Porous materials are being investigated as low dielectric constant (low-k) materials. While porosity decreases thek-value of a material by decreasing its density, it simultaneously allows unwanted adsorption and diffusion of chemicals inside the porous matrix. To investigate this, different porous low-...
Study the impact of liner thickness on the 0.18 μm devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric The electrical performance of hydrogen silsesquioxane (HSQ) as the interlayer level dielectric (ILD) has been determined by using two-metal-layered test st.....