One of the most important characteristics of semiconductors is the dielectric constant which determines their electrical behavior. Measurements of the dielectric constant have been made on p- and n- type germanium of various resistivities (20, 10, and 1/2 ohm-cm). At the same time the ...
We calculate the dielectric function ε1(ω) of silicon and germanium for frequencies below the direct band gap at the experimental lattice constant as wel... ZH Levine,DC Allan - 《Phys Rev B Condens Matter》 被引量: 223发表: 1991年 Frequency and Temperature Dependence of the Dielectric Pro...
Dielectric Constant (relative to vacuum) Dielectric Strength (V/mil) Loss Tangent Max Temp (°F) Gallium Arsenide (GaAs) 13.1 0.0016 @ 10 GHz Germanium 16 Glass (Corning 7059) 5.75 0.0036 @ 10 GHz Glass (lead silicate) 7 - 14 (Table 2: LS30-LS32) Glass, Crushed / Powdered (...
Results are given on precision measurements of the relative dielectric constant of high-purity semi-insulating gallium arsenide. Using this and other data, it is concluded that the value is within about 0.5% of 12.9, and does not vary significantly between zero frequency and at least 70 GHz.关...
Experimental/ dielectric measurement dielectric properties of solids electrical conductivity measurement electrical conductivity of solids elemental semiconductors ferrites germanium manganese compounds powders/ dielectric constant measurement conductivity measurement powder samples cavity perturbation method TE 103 mode re...
Particularly contemplated cage compounds include adamantane and diamantane, and especially contemplated branched arms comprise ortho-bis-(phenylethynyl)phenyl. Especially contemplated polymeric networks have a dielectric constant of no more than 3.0, and are formed on the surface of a substrate. ...
In the crystal structure of the multi-nary oxide, an M-O bond length may be longer than the Be—O bond length. The multi-nary oxide may be an atomic layer deposition film. The dielectric may have a dielectric constant (k) of greater than or equal to about 10 and an energy bandgap ...
This is also a semiconductor structure, comprising: a semiconductor substrate; a germanium layer on the semiconductor substrate; and a high-dielectric constant oxide on the germanium layer. Preferably the germanium layer is single-crystal. Preferably the substrate is silicon and the germanium layer is...
The complex dielectric constant of methylammonium aluminum sulfate dodecahydrate, CHNHAl(SO)\\cdot12HO, was measured at various frequencies in a frequency range between 1× 10and 1× 10Hz in its para- and ferroelectric temperature region... Y Makita,M Sumita - 《Journal of the Physical Society...
The second types of materials are the class II materials, which have low dielectric constant values with lesser thermal stability. Due to the inherent characteristics of such II class materials; these have great advantages in electronic packaging and similar applications [6–10]. The preparation of...