CARDONA, Dielectric Constant of Germanium and Silicon as a Function of Volume, Thesis, Harvard University, Cambridge, Massachusetts, 1959.CARDONA, M. et al. Dielectric Constant of Germanium and Silicon as a Function of Volume. PHYS.AND CHEM. OF SOLIDS, v. 8, Jan. 1959. p. 204–206. [B...
Dielectric Constant (relative to vacuum) Dielectric Strength (V/mil) Loss Tangent Max Temp (°F) Gallium Arsenide (GaAs) 13.1 0.0016 @ 10 GHz Germanium 16 Glass (Corning 7059) 5.75 0.0036 @ 10 GHz Glass (lead silicate) 7 - 14 (Table 2: LS30-LS32) Glass, Crushed / Powdered (...
Values of dielectric constant varies with the change in materials. Some of the examples of materials is shown below in the table
The frequency dependence of conductivity and dielectric constant of glassy samples of (Na2B4O7)100-x(WO3)x′, where X=0, 1, 5, 15 and 30 mol % respectively, were measured in the temperature range 323–473 K. The a.c. conductivity σac (ω) is found to be proportional to ωS. Th...
germanium compoundshigh-frequency effectshopping conductionindium compoundslocalised statespermittivity/ frequency dependencetemperature dependenceThe dielectric parameters such as dielectric constant ( ε′), dielectric loss ( ε″), dielectric loss tangent (tan δ ) and the ac conductivity ( σ ac) of ...
where Ω is the volume of unit cell; ℏ is the reduced Planck’s constant; e and m are the electron charge and mass, respectively; φ is the electronic wave function; wk is the k-points weight; E is the energy level of conduction (c) and valence (v) band. The transition dipole ...
where ε is the complex dielectric function and ε(ω) is the dielectric constant of the material as a function of angular frequency ω. The determination of the optical properties from the dielectric function or the conductivity, and vice versa, is possible by using Maxwell equation. The optica...
The method may comprise forming source and drain regions in the substrate on either side of the gate dielectric. The germanium layer, which is preferably epitaxially grown, generally prevents formation of a low dielectric constant layer between the gate dielectric and the semiconductor substrate. The...
consumption of the electro-optic switch because the energy density is proportional to the square of the electric field which, in a multilayer device, is inversely proportional to the dielectric constant. The impact of the dielectric constant of the optical materials is illustrated with respect to ...
The optimum composition for this system was found to be x = 0.01, where the maximum values of dielectric constant (∼12000) with relatively lower dielectric loss (0.95) at 1 KHz and at room temperature were achieved. The change in the pyroelectric coefficient and spontaneous polarization of ...