the microwave dielectric substrates, which have high Q value, stable temperature and wide rangeofdielectric constant. phononmeiwa.co.jp phononmeiwa.co.jp 通過本公司長年培育而成的陶瓷材料技術,開發了微波用介電體基版,可在高頻率範圍內獲得高的Q值及擁有穩定 的溫度特性,並且介電常數範圍寬廣。
The novel composition advantageously has a dielectric value that is higher than the dielectric value of pure HfO2. The novel composition can be used for the application of dielectric material in memory capacitor applications and for the application as gate dielectric in transistor applications. ...
In the presence of adirect currentvoltage , the value of the dielectric constant decreases. Contrastingly, when an alternating current voltage is applied, the value of the dielectric constant increases. Frequency The frequency of the applied voltage also affects the dielectric constant. As the frequen...
How to reduce k-value Dielectric constant k (also called relative permittivity ϵr) is the ratio of the permittivity of a substance to that of free space. A material containing polar components, which are represented as electric dipoles (e.g. polar chemical bonds), has an increased dielectr...
At a temperature of 450 K, the permittivity starts changing due to ferroelectric conversion behavior with temperature. The peak value of the dielectric constant is consistently reciprocal with the frequency, as stated by Curie–Weiss law. A tuneable dielectric response has also been obtained in (H2...
Dielectric-ConstantSubstratesSurrounded byaSoft-and-HardSurface RongLinLi,SeniorMember,IEEE,GeraldDeJean,Member,IEEE,EmmanouilTentzeris,SeniorMember,IEEE, JohnPapapolymerou,SeniorMember,IEEE,andJoyLaskar,SeniorMember,IEEE Abstract--Thesurface-wavediffractionattheedgeofafinite sizesubstratewithahighdielectricconsta...
Results are given on precision measurements of the relative dielectric constant of high-purity semi-insulating gallium arsenide. Using this and other data, it is concluded that the value is within about 0.5% of 12.9, and does not vary significantly between zero frequency and at least 70 GHz.关...
In other words, the maximum electric field at the mesa-etched p-n junction diodes covered with films with a dielectric constant k value of 10 was reduced to 2.0 MV/cm from 3.1 MV/cm (for SiO2 of k = 3.9). Figure 3. Electric field along the mesa and peripheral from point A to ...
The influence of the dielectric constants of the dipolar ion, and of the solvate layers on the electric susceptibility of solutions of dipolar ions, sensitively depends on the value of the inner dielectric constant of the dipolar ion ... T G?Umann,HH Günthard - 《Helvetica Chimica Acta》 ...
Composition of these materials controls the dielectric constant of the films: bulk PTFE for example has a k value of ∼2.0. The ability to derive films over a wide spectrum of compositional and structural space, coupled with an understanding of structure–property–processing relationships enables ...