The novel composition advantageously has a dielectric value that is higher than the dielectric value of pure HfO2. The novel composition can be used for the application of dielectric material in memory capacitor applications and for the application as gate dielectric in transistor applications. ...
This time-dependent dielectric-constant increase (TDDI) was estimated for a practical operating condition by extrapolation. The extrapolated TDDI lifetimes and k k -value increases for tested materials (k=2.33.2) (k=2.33.2) ranged from 30 days to 1,000 years and from 0 to 23%, respectively...
In the presence of adirect currentvoltage , the value of the dielectric constant decreases. Contrastingly, when an alternating current voltage is applied, the value of the dielectric constant increases. Frequency The frequency of the applied voltage also affects the dielectric constant. As the frequen...
At a temperature of 450 K, the permittivity starts changing due to ferroelectric conversion behavior with temperature. The peak value of the dielectric constant is consistently reciprocal with the frequency, as stated by Curie–Weiss law. A tuneable dielectric response has also been obtained in (H2...
(ε) and the electric field constant (ε0). The latter is a natural constant and amounts to 8.854 × 10−12F m−1in vacuum.Table 1lists the relative dielectric constants of different materials; it shows that the relative dielectric constant is not a fixed value, but varies according ...
The test rig is based on a sapphire whispering-gallery resonator and allows the measurement of the following parameters: dielectric constant (epsiv) of the dielectric substrate in the range from 2 to 10, loss tangent (tandelta) of the dielectric substrate in the range from 10-4 to 10-2, ...
The dielectric constant is 9.4 at room temperature. The value is discussed with the relationship of ε(0)=1+(\hbarωp/Eg)2. The dielectric constant varies linearly with temperature in the temperature range between 77 and 300 K. The dielectric constant extrapolated linearly to 0 K is 8.8. ...
Porous materials are being investigated as low dielectric constant (low-k) materials. While porosity decreases thek-value of a material by decreasing its density, it simultaneously allows unwanted adsorption and diffusion of chemicals inside the porous matrix. To investigate this, different porous low-...
Dielectric constant ( K) showed nearly same value below x=0.35 and increased with increasing amount of Zn 1/3Ta 2/3O 2 contents above x=0.40. Zr 1 x(Zn 1/3Ta 2/3) xTiO 4 materials have excellent microwave dielectric properties with K=42.5, Qf 0=40,200 and temperature coefficient ...
If the constraint is removed, the measurement yields ε T , the "unclamped" or free dielectric constant. The temperature of the measurement is given when available; the symbol r.t. indicates a value at nominal room temperature. The frequency of the measurement is given in the last column (...