Nitrogen incorporation below 2 at% into magnetron sputtered a—Ge: H increases the dark conductivity from 3·10 (Ωcm) to 3·10 (Ωcm) at maximum. The density of defect states detected by PDS increases proportional to the square root of nitrogen partial pressure. It is suggested that ...
Amorphous titanium nitride (TiN) thin films have been prepared on silicon (Si) and glass substrates by direct-current (DC) reactive magnetron sputtering with a supported discharge (triode). Nitrogen gas (N-2) at partial pressure of 0.3 Pa, 0.4 Pa, 0.5 Pa, and 0.6 Pa was used to prepare...
Furthermore, we also prepared W-Ti-N films using W-20wt.%Ti composite targets by magnetron sputtering technology. The results show that the film hardness can reach up to 50 GPa [30]. Additionally, Ag is often added to hard nitride films as a lubricant agent to achieve wide temperature ...
SANCHEZ C M T, FONSECA-FILHO H D, MAIA DA COSTA M E H, et al. Nitrogen incorporation into titanium diboride films deposited by dc magnetron sputtering: Structural modifications [J]. Thin Solid Films, 2009, 517(19): 5683-5688.Sanchez CMT, Filho HDF, Costa MEHMD, Jr FLF. Nitrogen ...
Target voltage measurements during DC sputtering of silver in a nitrogen /argon plasma. Depla D. Vacuum . 2003D. Depla and R. De Gryse, "Target voltage measurements during DC sputte- ring of silver in a nitrogen/argon plasma," Vacuum, vol. 69, pp. 529-536, Jan. 2003....
Influe- nce of nitrogen flow rates on the structure, hardness, and electrical resistivity of HfN coatings by IX; sputtering[J]. J Mater Eng Per- form, 2015,24 (4) : 1558.Influence ofNitrogen Flow Rates on the Structure, Hardness, and Electrical Resistivity of HfNCoatings by DC Sputtering...
The effects of nitrogen incorporation into amorphous boron carbide films deposited by dc-magnetron sputtering in argon鈥搉itrogen atmospheres were studied. The partial pressures of nitrogen, p N 2, ranged from 0 to 50% and the total pressure was 0.25 Pa. A negative bias voltage, V b, was ...
Based on these results, it is possible to explain the influence of nitrogen addition to an argon plasma (reactive sputtering) on the ATV when sputtering under constant power or current conditions. The variation of the ATV depends on two factors. On the one hand, the ATV decreases due to an...
Magnetron-sputtered a-SiNx:H films containing various amounts of nitrogen (x = 0.05–0.54) have been examined by optical and IR-spectroscopy, RBS, elastic recoil detection, ESR-spectroscopy and conductivity measurements. Small amounts of nitrogen (x < 0.1) enhance the photoconductivity resulting ...
Sputtering rate and refractive index decrease respectively from 8.33 to 1.73 /sec and from 2.52 to 1.68 with nitrogen mole fraction. The value of refractive index at critical nitrogen mole fraction is about 1.8. When the nitrogen mole fraction increases the frequency related to Si-H band, on ...