dmosfet dmos场效应晶体管dmost 双扩散金属氧化物半导体晶体管dmux 多路分配器dolby integrated circuit 道尔比集成电路domain 磁畴domain structure 磁畴结构domain wall 磁畴壁dominant mode of propagation 传播的郑dominant wave 吱donor atom 施汁子donor dopant 施钟质donor impurity 施钟质donor level 施周级donor ...
double diffused metal double diffused metal doublediffusedmosfetd double diffused mos t double diffused trans double diffusion epit doublediode double disk unit double dog double doped transist double dormitory for double dry calorimete double dual double duty refrigera doubled words double earth fault ...
double derived key double difalloyed inj double diffacclimated double difference double diffused diode double diffused injec double diffused metal doublediffusedmosfetd double diffused mos t double diffused proce double diffused trans double diffusion double diffusion tech double diode double direction comm ...
GaAs MESFETs are similar to silicon MOSFETs. The major difference is the presence of a Schottky diode at the gate region which separates two thin n-type active regions, that is, source and drain, connected by ohmic contacts. It should be noted that both D type and E type MESFETs, that ...
Mosfet MCU Dedicated integration AC-DC PD protocol chip Single touch Operational amplifier Storage class Logic chip Hall Chip News Industry News Company News JOB Contact Us Mr Yu 13823761625 0755-27595155 Sales@ChipSourceTek.com InFo@ChipSourceTek.com Room302,building A3,MingXi Creative Park,FuYon...
New Product N-Channel 75-V (D-S) MOSFET Si7174DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 75 0.007 at VGS = 10 V ID (A)a, g 60 Qg (Typ.) 47.5 nC FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested PowerPAK ...
首先,D类放大会将原始的模拟信号波形,与比它更高频率的三角波(或锯齿波)进行电压比较(透过电压比较器),如此便可将以振幅高低性表示的信号调变成以脉波宽窄性表示的信号,此即是脉宽调变(Pulse Width Modulation;PWM),之后将PWM信号输出到MOSFET场效晶体管上的闸极,以控制晶体管的导通、关闭,同时也在这个阶段进行...
www.vishay.com SiR150DP Vishay Siliconix N-Channel 45 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a ...
E-era MOSFET transistor k2837 2sk1020 2SK4115 k4115 TO-3P mrf150 rf power transistor $0.07 - $0.13 Min. order: 10 pieces Easy Return NPN power transistor KSE44H11 E44H11 TO-220 80V/10A/50W $0.20 - $1.00 Min. order: 10 pieces ...
Status: active and preferred Infineon Read MoreBuy Online 2.5 kW full-bridge PFC high-efficiency evaluation board using CoolGaN™ 600V e-mode HEMTs Supported Product Families High/Low Side Switch MOSFET Gate Driver CoolSET™ CoolGaN™