在45/65nm以下节点,栅氧化层物理厚度减薄到1.5nm以下,器件漏电流大幅增加,这时需要引入相对介电常数(相对介电常数Relative Dielectric Constant,在半导体中用k表示,反应材料的贮电能力)远大于SiO2(k≈3.9)的高k栅介质材料作为栅氧化层,例如HfO2(k为24~40),可以保证在等效栅氧厚度(EOT)持续缩小的同时,使栅介质的...
In addition, it has a high decomposition temperature (ca. 2400掳C), good chemical stability, a thermal expansion coefficient closely matched to that of silicon, high thermal conductivity, and a dielectric constant close to that of Al 2 O 3 ....
半导体工艺之CVD
For instance, the extremely high thermal conductivity of diamond combined with its low dielectric constant provide an ideal combination for heat spreaders for high power devices such as laser diodes. High temperature, high power, and high frequency device applications could take advantage of the ...
4(a)) due to the larger lattice constant of MoS2 compared to SiC (3.08 Å for SiC and 3.16 Å for MoS2 [25]). The strain linearly increases with the rising frequency difference of the characteristic peaks. A similar correlation is observed for the shift in charge doping. As the Δ...
The Hall voltage VH is measured at a constant applied current, while sweeping a perpendicular magnetic field (Fig. 3a). The Lorentz force acting on the moving charges in graphene resulted in a voltage difference in the transverse direction (Hall voltage VH). The detected Hall voltage, measured...
I. kinetics of the primary decomposition to C2H6 + H2; rate constant for the homogeneous unimolecular dissociation of methane and its pressure dependence. Can J Chem 53:3580–3590 Article Google Scholar Alstrup I, Chorkendorff I, Ullmann S (1992) The interaction of CH4 at high temperatures ...
The increasing density of integrated circuits (ICs) is increasing the need for materials with high dielectric constants to be used in electrical devices such as capacitors for forming high capacity DRAMs. Capacitors containing high-dielectric-constant materials, such as organometallic compounds, usually ...
1.Highpuritydepositioncanbeachieved.2.Agreatvarietyofchemicalcompositionscanbedeposited.3.Somefilmscannotbedepositedwithadequatefilmpropertiesbyanyothermethod.4.Goodeconomyandprocesscontrolarepossibleformanyfilms.DCVDApplication Oxide(un-doped&doped);Nitridearethetypicaldielectricfilm.Oxynitfilmpropertyisnormally...
such as a SiON, SiC, or SiCO film. An oxide rich cap deposited on a low dielectric constant film deposited according to Example 1 had a refractive index of 1.46, a uniformity of 2.0%, a compressive stress of −180 MPa, and a wetting angle of 42° for a subsequently deposited anti-...