Subthreshold slope (SS)In this article, an analytical Subthreshold Drain Current model has been developed for Negative Capacitance Junctionless FinFET (NC-JL FinFET). To obtain the subthreshold current model for NC-JL FinFET the drift diffusion equation is solved by including negative capacitance ...
9 RegisterLog in Sign up with one click: Facebook Twitter Google Share on Facebook drift current [′drift ‚kə·rənt] (oceanography) A wide, slow-moving ocean current principally caused by winds. Also known as drift; wind drift; wind-driven current. ...
14.2 were proportional to the conductance (i.e., g) times the driving force (i.e., the difference between the membrane potential, Vm, and the Nernst potential, Eion, for a given ion species), resulting in a general equation for an ionic current of the form: (14.3)Iion(Vm,t)=gion(...
In such TFETs, the joint density of states is nonzero just at one certain value of gate voltage17 – which could lead to the abrupt-most current switching ever. In practice, the density-of-states effects on the subthreshold steepness are largely smeared. The reason for the smearing in ...
Results of calculations27 for different values of leakage currents are shown in Fig. 5.11. One can see that for a low leakage current the signal increases and reaches the same saturation value. This value is given by Equation [5.26]. For higher leakage currents, the signal does not reach ...
We present a simple algorithmic procedure for constructing a multiple-input translinear element (MITE) network from a translinear-loop equation. We also gi... BA Minch - 《IEEE Transactions on Circuits & Systems I Fundamental Theory & Applications》 被引量: 94发表: 2003年 Dynamic Translinear Circ...
As a consequence, important adjustment takes place in the subthreshold current modeling equation and compared to intrinsic carrier concentration squared term-based reduction, surface potential incorporating exponential term based reduction is only moderate at lower substrate temperature. Combined effects of ...
1(a) is that the body effect can be eliminated in the common n-well process. Using the four transistors, M1, M2, M3, and M4, in a weak inversion region, the following equation can be obtained using the loop relation of M3, M4, and R. IR=VGS4-VGS3R The well-known subthreshold ...
The direct tunneling effect in SiC Schottky contacts is simulated based on electron tunneling probabilities through a triangular barrier,which are accurately solved using the one-dimensional time-independent Schrdinger equation. 通过精确求解一维定态薛定谔方程得到电子通过三角形势垒的隧穿几率,模拟了SiC肖特基...
Equation [4] illustrates the basic square-law equation for MOSFET saturation current, wherein the process and temperature dependent terms are highlighted, namely, μ(T)Cox(P) and Vt(T,P). Id is the drain current through the MOSFET as a function of temperature and process, μ(T) is the ...