natural length has been used to calculate center channel potential which in turn used to formulate the 'virtual cathode' potential equation of the device. Eventually, the subthreshold current modeling is done using Pao-Sah's current equation along with the 'virtual cathode' potential equation. Besid...
Membrane current refers to the sum of the ionic current and the local capacity currents that occur when there is a change in the ionic density between the inner and outer surface of the membrane. It is represented by the equation I = Cm (δV/δt) + Ij, where I is the membrane curren...
Results of calculations27 for different values of leakage currents are shown in Fig. 5.11. One can see that for a low leakage current the signal increases and reaches the same saturation value. This value is given by Equation [5.26]. For higher leakage currents, the signal does not reach ...
Equation [4] illustrates the basic square-law equation for MOSFET saturation current, wherein the process and temperature dependent terms are highlighted, namely, μ(T)Cox(P) and Vt(T,P). Id is the drain current through the MOSFET as a function of temperature and process, μ(T) is the ...
In such TFETs, the joint density of states is nonzero just at one certain value of gate voltage17 – which could lead to the abrupt-most current switching ever. In practice, the density-of-states effects on the subthreshold steepness are largely smeared. The reason for the smearing in ...
We confirmed a novel selector behavior with a selectivity over 109, high on-current density of 1 MA cm-2 and extremely abrupt turn-on with 5 mV per decade for the Ag-doped ZnO films, as shown in Figure 2b. The selectivity is defined in the following equation (equation (5)). ...
[31], as shown in Fig.2. Equation (1) represents the calculation formula for tunneling generation rate, in which the relatedABTBT,ABTBT,PandFOare carefully calibrated. To accurately simulate the effects of TAT (trap-assisted tunneling), we employed the Hurkx TAT Model within the framework ...
The surface potential model used is obtained by solving a pseudo-2D Poisson’s equation applied within the depletion layer depth along the channel, which varies with bias voltages and the substrate doping in the pockets as well as the central portion of the channel. Similarly, the conduction ...
(~ 25.94 mM) following many spikes, as shown in Fig.1e. Compared Fig.1c–e,\({\left[{\text{K}}^{+}\right]}_{\text{o}}\)for spiking exhibits subthreshold oscillations, whereas\({\left[{\text{K}}^{+}\right]}_{\text{o}}\)for MMB manifests nearly “all-or-none” pulse...
Thus, the task of selecting a desired IO/IRcurrent ratio is simplified to selecting transistor geometry in accordance with Equation (3). Typically, L1=L2in order to avoid matching problems, and thus ##EQU4## However, factors such as channel length modulation; ##EQU5## threshold voltage mism...