Like VLSI technology, the scaling in the MEMS is asymmetric and needs optimization in each direction. In the MEMS, depending upon the working principle, the scaling laws vary from device to device. In the present work, spring constant scaling laws for the electrostatic RF MEMS devices are ...
- Symposium on Vlsi Circuits 被引量: 0发表: 2005年 Selective-Capacitance Constant-Charge-Injection Programming Scheme for High-Speed Multilevel AG-AND Flash Memories -- * The market for flash memories has emphasized bit-cost reduction and high programming throughput because of demanding applications ...
In a word, the swing of the whole circuit is rail-to-rail. The circuit designis realized in 0.35 m CMOS technology and works in a 2.0V low supply voltage. 关键词: CMOS Low-power Rail-to-rail Push-pll 被引量: 3 年份: 2006 ...
andelectronicdefects.TheuseofhighKoxidesincapacitorsofdynamicrandomaccessmemoriesisalso covered. PACS.85.40.-eMicroelectronics:LSI,VLSI,ULSI;integratedcircuitfabricationtechnology– 77.55.+fDielectricthinfilms–73.61.-rElectricalpropertiesofspecificthinfilms–81.15.-zMethodsof ...
et al., “Novel None-Mask Self-Heating Pillar Phase Change Memory,” 2006 Symposium on VLSI Technology, 2 pp. Haring Bolivar, P. et al., “Lateral Design for Phase Change Random Access Memory Cells with Low-Current Consumption,” presented at 3rd E*PCOS 04 Symposium in Balzers, ...
Moreover, the digital control also allows simple implementation of power savings (management) techniques based on voltage scaling that result in significant extension of the battery life. In those techniques, to allow minimal power consumption, the supply voltage of the device is changed in accordance...
Gate oxide breakdown under current limited constant voltage stress. In: VLSI Tech Dig 2000. p. 214.B. P. Linder et al., "Gate oxide breakdown under current limited constant voltage stress," Digest of the 2000 Sympo- sium on VLSI Technology, pp. 214-215, 2000....
Complementary ferroelectric-capacitor logic for low-power logic-in-memory VLSI. IEEE J. Solid-State Circuits 2004, 39, 919–926. [Google Scholar] [CrossRef] Wang, Y.Y.; Wang, K.C.; Wu, C.H.; Chang, T.Y.; Ronchi, N.; Banerjee, K.; Van den Bosch, G.; Van Houdt, J.; Wu,...