Near the conduction band edge, an electron can be described as a particle of mass mC confined to a three-dimensional cubic box of dimension d with perfectly reflecting walls, i.e., a three-dimensional infinite rectangular potential well. ...
网络释义 1. 导带边缘 下载_0KB_ ... conducting polymer 导电聚合物conduction band edge导带边缘conduction calorimeter 传导卡计 ... www.docstoc.com|基于5个网页 2. 带缘 带缘(conduction band edge)的部分以多 ir.hust.edu.tw|基于 1 个网页
We report, for the first time, the conduction-band edge discontinuity (ΔE c) of the InGaAs/GaAsSb staggered lineup heterostructure, lattice-matched to InP, grown by molecular beam epitaxy. From the temperature dependence between 330 and 410 K of current-voltage characteristics of InGaAs/GaAsSb...
a距地面1.3～1.5 Is apart from ground 1.3~1.5[translate] a実効電力が解っている場合は 正在翻译,请等待...[translate] a5.1 Assembly Guide 5.1 汇编指南[translate] aThe conduction-band edge has a hydrostatic energy shift, 传导带边缘有一个流体静力的能量转移,[translate]...
a新增的项目 Additional project[translate] a美元比人名币值钱 US dollar is more valuable than the personal name coin[translate] aThe conduction-band edge has a 静力能量shift, 传导带边缘有一个静力能量转移,[translate]
The conduction-band edge has a 静力能量shift,问题补充:匿名 2013-05-23 12:21:38 导带边有一个静力能量转移, 匿名 2013-05-23 12:23:18 该传导的频带边缘有一个静力能量shift、 匿名 2013-05-23 12:24:58 传导带边缘有一个静力能量转移, 匿名 2013-05-23 12:26:38 传导带边缘有静力...
First observation of an extremely large‐dipole infrared transition within the conduction band of a GaAs quantum well Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton states Total valence-band densities of states of III-V and II-VI compoun...
Shallow donor levels and the conduction band edge structure in polytype of SiC. An- Ban Chen,P Srichaikul. Physica Status Solidi B Basic Research . 1997An-Ban Chen,Srichaikul P. Shallow Donor Levels and the Conduction Band Edge Structures in Polytypes of SiC [ J ]. Phys. Stat. Sol. (...
Band-edge exciton in quantum dots of semiconductors with a degenerate valence band: Dark and bright exciton statesTotal valence-band densities of states of III-V and II-VI compounds from x-ray photoemission spectroscopyCalculated Valence-Band Densities of States and Photoemission Spectra of Diamond ...
LPE MCTepitaxial film.〓. The laser-induced micro-photoluminescence with quasi-periodic structure was observed forthe first time at room temperature in one of MOVPE MCT epitaxial film samples. The range offluorescence was from 1.46eV to 2.21eV, i. e., 1.73eV above the conduction band edge. ...