图4. (a)混合位宽量化模型在ResNet50和VGG16上的实现; (b) 面向细粒度数字存算优化的权重驻留数据流 Paper《Addition is Most You Need: Efficient Floating-Point SRAM Compute-in-Memory by Harnessing Mantissa Addition》存内计算在高效加速机器学习任务方面具有巨大潜力。在众多存储器件中,SRAM因其在数字领域的...
Compute-in-memory (CIM) accelerators based on emerging memory devices are of potential use in edge artificial intelligence and machine learning applications due to their power and performance capabilities. However, the privacy and security of CIM accelerators needs to be ensured before their widespread...
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Realizing increasingly complex artificial intelligence (AI) functionalities directly on edge devices calls for unprecedented energy efficiency of edge hardware. Compute-in-memory (CIM) based on resistive random-access memory (RRAM)1promises to meet such demand by storing AI model weights in dense, anal...
Shim W, Yu S (2021) Technological design of 3D NAND based compute-in-memory architecture for GB-scale deep neural network. IEEE Electron Device Lett 42(2):160–163 ArticleGoogle Scholar Si X et al (2020) A 28nm 64Kb 6T SRAM computing-in-memory macro with 8b MAC operation for AI edge...
More information:Yen-Cheng Chiu et al, A CMOS-integrated spintronic compute-in-memory macro for secure AI edge devices,Nature Electronics(2023).DOI: 10.1038/s41928-023-00994-0 Journal information: © 2023 Science X Network
et al. A CMOS-integrated compute-in-memory macro based on resistive random-access memory for AI edge devices. Nat. Electron 4, 81–90 (2021). Article Google Scholar Chen, W.-H. et al. A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for ...
There is disagreement regarding the benefits of IMC (also called compute-in-memory, or CIM). Some say it’s all about reducing data movement, a huge component of AI energy consumption. “It’s easy to put the MACs [multiply/accumulate circuits] down,” said Gordon Cooper, product manager ...
A Ferroelectric Compute-in-Memory Annealer forCombinatorial Optimization ProblemsXunzhao Yin 1 ∗ , Yu Qian 1 ∗ , Alptekin Vardar 2 , Marcel Günther 2 ,Franz Müller 2 , Nellie Laleni 2 , Zijian Zhao 3 , Zhouhang Jiang 3 , Zhiguo Shi 1 ,Yiyu Shi 3 , Xiao Gong 4 , Cheng Zhuo...
A compute-in-memory dynamic random access memory bitcell is provided that includes a first transistor having an on/off state controlled by a weight bit stored across a capacitor. Th