Simulation and comparison of 3C-SiC, 6H-SiC and 4H-SiC nanowire fets performance Silicon Carbide (SiC) is a very popular industrial wide bandgap semiconductor because of its potential for high-power, high-temperature, high-power microwa... RU Hasan - Dissertations & Theses - Gradworks 被引量...
CPES annual power electronics conference proceedings : Dialogue sessions, part 2: CPES (Center for Power Electronics Systems) annual power electronics conference, April 7-9, 2013Z. Chen, D. Boroyevich and J. Li,"Behavioral Comparison of Si and SiC Power MOSFETs for High- Frequency Applications"...
Buttay, and H. Morel, "Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and com- parison with BJTs," Journal of Microelectronics Re- liability, Volume 55, Issues 9-10, August- September 2015, Pages 1708-1713, ISSN 0026- 2714....
The performance and characterization of SiC JFETs and BJTs, used as inverter switching devices, in a 2 kW, high temperature, 33 kHz, 270-28 V DC-DC converter has been accomplished. SiC and Si power devices were characterized in a phase shifted H-bridge ...
The operation of the motor under no load and on different mechanical loads has been analysed. In these cases, the response of the MOSFETs to temperature changes was also analysed by changing the cooling temperature. As a result of the study, SiC MOSFETs were less ...
SiC-MOSFETsSi-IGBTsElectric vehicle traction systemsLossesIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) traction systems under low speed and light load are investigated and compared comprehensively, particularly from efficiency point of view. Both ...
F Allerstam,G Gudjonsson,HOOlafsson,et al.Comparison between oxidation processes used to obtain the high inversion channel mobility in 4H-SiC MOSFETs. Semiconductor Science Technology . 2007Allerstam, F. et al., "Comparison between oxidation processes used to obtain the high inversion channel ...
Silicon-Carbide (SiC) MOSFETs are beginning to gain wide acceptance for power electronics applications requiring high efficiency and high operational temperatures. There is a growing number of commercial offerings at 1200 V from different manufacturers that may have very distinctive processes that need ...
Comparison of Impedance Measurement Techniques for Extracting Parasitic Inductance of SiC MOSFETsdoi:10.1109/ecce.2018.8558077Tianjiao LiuYanjun FengYuanfeng ZhouRuntao NingThomas T.Y. WongZ. John ShenIEEEEuropean Conference on Cognitive Ergonomics
comparison of the on-resistance and high-temperature performance between Si and SiC MOSFETs.The analysis of the differences between the two will mainly come out from the perspective of material properties,and the conclusion of what is the ideal material for power MOSFET devices will be finally ...