SiC device comparisonFor the first time, large area 10 kV SiC power devices are being produced capable of yielding power modules for high-frequency megawatt power conversion. To this end, the switching performa
Buttay, and H. Morel, "Study of short-circuit robustness of SiC MOSFETs, analysis of the failure modes and com- parison with BJTs," Journal of Microelectronics Re- liability, Volume 55, Issues 9-10, August- September 2015, Pages 1708-1713, ISSN 0026- 2714....
CPES annual power electronics conference proceedings : Dialogue sessions, part 2: CPES (Center for Power Electronics Systems) annual power electronics conference, April 7-9, 2013Z. Chen, D. Boroyevich and J. Li,"Behavioral Comparison of Si and SiC Power MOSFETs for High- Frequency Applications"...
power cycling capability,Si MOSFETs,SiC MOSFETs,conduction modes,failure mechanismDifferent from the single conduction mode of IGBT and diode, the MOSFET has three conduction modes and corresponding to three different power cycling test (PCT) methods respectively. In order to fully understand the ...
Multidimensional device structures can improve the typical performance trade-off of semiconductor power transistors. In this paper, the on-state, reverse, and short-circuit performance of a SiC quasi-planar trench MOSFET are compared to those of a classical planar device through advanced 3-D TCAD ...
MOSFET,Logic gates,Silicon carbide,Power dissipation,Resistance,Threshold voltage,JunctionsThe short-circuit capability of Silicon Carbide (SiC) MOSFETs is much worse than the Si IGBT counterparts. There are two kinds of commercially available SiC MOSFET devices (trench MOSFETs and planar MOSFETs), and...
Comparison of Impedance Measurement Techniques for Extracting Parasitic Inductance of SiC MOSFETsdoi:10.1109/ecce.2018.8558077Tianjiao LiuYanjun FengYuanfeng ZhouRuntao NingThomas T.Y. WongZ. John ShenIEEEEuropean Conference on Cognitive Ergonomics
SiC-MOSFETsSi-IGBTsElectric vehicle traction systemsLossesIn this paper, the performance of both SiC-MOSFETs and Si-IGBTs based electric vehicle (EV) traction systems under low speed and light load are investigated and compared comprehensively, particularly from efficiency point of view. Both ...
4H-SiC MOSFETs(000-1) SiC substrate(11-20) SiC substrateinversion layer mobilityThe effect of using different orientations of 4H-SiC substrates on the performance of 4H-SiC MOSFETs has been evaluated. Three sets of samples with (0001), (000-1) and (11-20) oriented Si...
First, a universal hardware platform is designed and developed to test power semiconductor devices with various device packages and measuring requirements. Using the developed platform, the static characteristics and switching performance of the two types of SiC MOSFETs (one planar and one trench type)...