Compact modeling of high voltage MOSFETs In the automotive industry, there is a strong trend that has increased the electronics in cars for various functions like fuel injection, electric control ... YS Chauhan 被引量: 10发表: 2007年 HiSIM-HV: A Scalable, Surface-Potential-Based Compact Model...
Consequently, HiSIM-HV can accurately calculate the physical potential distribution in the entire asymmetric LDMOS structure or the symmetric HVMOS structure and determine all electrical and thermal high-voltage MOSFET properties without relying on any form of macro modeling or sub-circuit formulation. ...
High-Voltage MOSFET Modeling E. Seebacher, K. Molnar, W. Posch, B. Senapati, A. Steinmair, W. Pflanzl Pages 105-136 Physics of Noise Performance of Nanoscale Bulk MOS Transistors R. P. Jindal Pages 137-164 Compact Models of Bipolar Junction Transistors ...
To enable accurate circuit-aging simulation, even for high-voltage MOSFETs, the carrier traps within the highly resistive drift region are additionally considered.doi:10.1016/j.microrel.2017.12.003Miura-Mattausch, MHiroshima UnivMiyamoto, HHiroshima UnivKikuchihara, H...
Layout-aware Variation Modeling and Its Application to Op-Amp Design As geometrical scaling of the transistor dimensions, such as feature size and supply voltage, has dominated the semiconductor industry for greater chip den... KSHDL Nakatake - 《電子情報通信学会技術研究報告. vlsi設計技術. vlsi ...
Electrical engineering Analytical and compact modeling of highly asymmetrical independent double -gated transistors TENNESSEE TECHNOLOGICAL UNIVERSITY Stephen Parke JeediguntaManjeeraRecent research has focused on dynamic and flexible threshold multi-gate transistors that enable ultra-low-power (ULP) and ...
Dong Wang has broad interests in power management solutions and analog circuits, including high-frequency power conversion, distributed power systems, power factor correction techniques, low-voltage high-current conversion techniques, high-frequency magnetic integration, and modeling and control of conve...
Quasi-2D compact modeling for double-gate MOSFET 来自 Semantic Scholar 喜欢 0 阅读量: 84 作者:M Chan,TY Man,H Jin,X Xi,C Hu 摘要: This paper presents an approach to model the characteristics of undoped Double-Gate MOSFETs without...
Performance Study of GCGS DG-MOSFETs for Asymmetric Doping and High K Oxide Material Using NQS Method This work reported the analog and radio frequency performance for the Graded channel Gate stack double gate MOSFET structure for change in different high K... SK Swain,S Adak,S Parija,... ...
Iniguez, "Analytical Compact Modeling Framework for the 2D Electrostatics in Lightly Doped Double- Gate MOSFETs." Solid-State Electronics, vol. 69, pp. 72 - 84, 2012.M. Schwarz, T. Holtij, A. Kloes, and B. Iniguez, "Analytical compact modeling framework for the 2D electrostatics in ...