作者:Gildenblat, Gennady 编 页数:527 定价:$ 145.77 ISBN:9789048186136 豆瓣评分 目前无人评价 评价: 内容简介· ··· Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single ...
网络释义 1. 紧凑建模 ...件的尺寸越来越小,低维量子效应凸显,人们越来越强调紧凑建模(compact modeling)的思想,即利用统一的数学模型精 … cdmd.cnki.com.cn|基于 1 个网页
“This excellent reference covers a niche in the recent development of compact modeling for integrated circuit systems. The book can serve as a guide to current research based on the down-scaling of semiconductor devices, particularly for device physicists, electrical engineers and applied mathematicians...
13. Multi-Gate MOSFET Compact Model BSIM-MG. 14. Compact Modeling of Double-Gate and Nanowire MOSFETs.Part V. Statistical Modeling. 15. Modeling of MOS Matching. 16. Statistical Modeling Using Backward Propagation of Variance (BPV).Index.Gennady Sh Gildenblat...
论文--毕业论文 文档标签: 模型器件器件模型助 系统标签: mosfet器件compactmodeling模型 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 5, MAY 2001 1019 A Physically Based Relation Between Extracted Threshold Voltage and Surface Potential Flat-Band Voltage for MOSFET Compact Modeling James Benson, ...
Physics to system-level modeling of silicon-organic-hybrid nanophotonic devices The continuous growth in data volume has sparked interest in silicon-organic-hybrid (SOH) nanophotonic devices integrated into silicon photonic integrated circuits (PICs). SOH devices offer improved speed and energy efficiency...
Advanced compact modeling of Silicon-On-Insulator MOSFETs for VLSI applications In recent years partially depleted Silicon-On-Insulator technology has become the mainstream technology for low power, high performance CMOS VLSI applicati... W Wu - Dissertations & Theses - Gradworks 被引量: 3发表: 200...
摘要: A practical approach for the compact modeling of electrostatic discharge (ESD) protection devices, using the behavioral language Verilog-A, is presented. Models of the NMOS transistor, the vertical n-p-n transistor, the diode, and the resistor have b......
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DEEP SUBMICRON CMOS VLSI CIRCUIT RELIABILITY MODELING, SIMULATION AND DESIGN A set of accelerated lifetime models and failure equivalent circuit models are proposed for the most common MOSFET intrinsic wearout mechanisms, including ... X Li - Dissertation Abstracts International, Volume: 66-12, Sectio...