AO8800-VB 是一款具有共源共极双 N+N-Channel 结构的 MOSFET,采用 TSSOP8 封装。该器件设计用于高效能的电子系统,采用先进的沟槽技术,具备低导通电阻和良好的电流处理能力,适合广泛的电源管理和开关控制应用。 ### 详细参数说明 | 参数 | 数值 | |---|---| | **封装** | TSSOP8 | | **配置** | ...
2501NZ-VB 是一款Common Drain-N+N-Channel MOSFET,封装形式为TSSOP8,采用了Trench技术,具有低压(20V)和中电流(6.6A)处理能力。该器件在2.5V和4.5V栅极驱动电压下分别具有32mΩ和22mΩ的导通电阻,适用于低压、中电流应用场合,如手机充电管理、LED驱动等,具有低导通电阻和高效能量转换的特点。 ### 二、2501NZ-...
(nC) g IS1S2 (A) a Configuration 1 4 G2 3 D2 2 D1 G1 Bottom View 30 0.00450 0.00695 14 101 Common drain FEATURES • TrenchFET® Gen IV power MOSFET • Very low source-to-source on resistance • Integrated common-drain n-channel MOSFETs in a compact and thermally enhanced ...
AO8820-VB 是一款共源共极双 N+N-Channel MOSFET,采用 TSSOP8 封装。该器件设计用于高效能电子系统,采用先进的沟槽技术,具有低导通电阻和良好的电流处理能力,非常适合广泛的电源管理和开关控制应用。 ### 详细参数说明 | 参数 | 数值 | |---|---| | **封装** | TSSOP8 | | **配置** | 共源共极...
AP6800GEO-VB 是一款双通道共栅N+N沟道MOSFET,采用TSSOP8封装。它适用于低电压、低功率应用场合,结合了先进的沟槽技术,提供高效的能源转换和稳定的性能。 ### 详细参数说明 - **封装类型**:TSSOP8 - **配置**:共栅N+N沟道 - **漏源电压 (VDS)**:20V ...
www.vishay.com SQUN700E Vishay Siliconix Automotive 40 V N- and P-Channel Common Drain MOSFET Pair and 200 V N-Channel MOSFET Package Top View Package Bottom View FEATURES • Optimized triple die package • TrenchFET® power MOSFET • 100 % Rg and UIS tested • AEC-Q101 qualified ...
(MOSFET), and more particularly, to a switching charger device including a common source N-channel MOSFET, in which a switch of a switching charger is connected, such that the MOSFET has a common source structure, by using the N-Channel MOSFET, so that the switches connected to an output ...
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD75208W1015 SLPS512A – JULY 2014 – REVISED MAY 2017 CSD75208W1015 Dual 20-V Common Source P-Channel NexFET™ Power MOSFET 1 Features •1 Dual P-Channel MOSFETs • Common Source Configuration • Small...
功能描述MonolithicCommonDrainN-Channel2.5VSpecifiedPowerTrenchMOSFET Download6 Pages Scroll/Zoom 100% 制造商FAIRCHILD [Fairchild Semiconductor] 网页http://www.fairchildsemi.com 标志 类似零件编号 - FDM2509NZ 制造商部件名数据表功能描述 IXYS CorporationFDM21-05QC ...
The invention provides a semiconductor device that has a fully depleted MOSFET and a partially depleted MOSFET having excellent characteristics on the same substrate without effecting control by means of the impurity concentration of the channel region. A semiconductor device is provided with a fully-de...