Acceleration and mitigation of carrier-induced degradation in p-type multi-crystalline silicon. Phys Status Solidi RRL 2016;10:237-241.D. N. R. Payne et al., "Acceleration and mitigation of carrier-induced degradation in p-type multi- crystalline silicon," Phys Status Solidi-Rapid Res Lett,...
A Four-state Kinetic Model for the Carrier-induced Degradation in Multicrystalline Silicon: Introducing the Reservoir State. Sol. Energy Mater. Sol. Cells 2018, 184, 48-56. [CrossRef]
JEDEC JESD28-A-2001测量DC压力下最大基层电流N-信道MOSFET Hot-Carrier-Induced降级 Procedure for Measuring N-Channel MOSFET Hot-Carrier-Induced Degradation under DC Stress首页 标准 JEDEC JESD28-A-2001 JEDEC JESD28-A-2001 预览[下载] 发布历史JEDEC JESD28-A-2001...
Influence of fin number on hot-carrier injection stress induced degradation in bulk FinFETs In this paper, hot-carrier injection (HCI) stress Huang,Yan-Hua,Lai,... - 《Microelectronics & Reliability》 被引量: 0发表: 2016年 Influence of fin number on hot-carrier injection stress induced degrada...
The gate-oxide thickness effects on hot-carrier-induced degradation have been investigated for submicron MOSFETs. A thinner gate oxide gives a higher substrate current, but reduced hot-electron effects. This is because the thin-gateoxide device has smaller mobility and threshold voltage degradation due...
devicesA method for recovery of degradation caused by avalanche hot carriers is provided that includes subjecting an idle bipolar transistor exhibiting avalanche degradation to a thermal anneal step which increases temperature of the transistor thereby recovering the avalanche degradation of the bipolar ...
Also, the degradation of the H-gate device is more significant than that of the T-gate device due to the higher drain current. Since the degradation of minimum noise figure is the most significant, the hot carrier effects should be taken into account in the design of LNA using the H-...
An experimental study of the degradation mechanisms of hot-carrier stressed SOI (SIMOX) MOSFET's is carried out. Depending on the applied stress conditions, it is found that device degradation is mainly caused by electron and hole trapping by intrinsic and generated oxide traps and/or by generati...
s new solution for evaluation of hot carrier induced degradation of multiple MOSFET devices. What is Hot Carrier Induced Degradation Due to the short channel length of MOSFETs in today’s ULSI, the electric field of the channel has become very high. The drain current easily ionizes electrons ...
28-A A PROCEDURE FOR MEASURING N-CHANNEL MOSFET HOT-CARRIERINDUCED DEGRADATION UNDER DC STRESS Introduction Hot-carrier-induced degradation of MOSFET parameters over time is an important reliability concern in modern microcircuits. High energy carriers, also called hot carriers, are generated in the ...