In this paper, the results of forward-bias stress on body diodes are analyzed in commercially available 1.7 kV 4H-SiC MOSFETs. Some devices show a significant degradation after forward-bias stress on the internal body diode. This implies that there are significant number of Basal Plane ...
MOSFETs, whether SiC-MOSFETs or otherwise, have a body diode between the drain and the source, as indicated in the diagram. As a consequence of the MOSFET structure, the body diode is formed by the pn junction between the source and drain, and is also called a parasitic diode or an inte...
I have a question about voltage drop of body diode in MOSFET. I heard that voltage drop value of the body diode is vary while dead-time. What I want to do is calculate conduction loss of three-phase two-level inverter using SiC MOSFET. So I want to know why voltage drop value of th...
Q: What properties do MOSFET body diodes have? A: A body diode is a parasitic diode formed between a source/drain due to MOSFET structure. The following characteristics are described on the datasheet.
Ultra-fast body diode Best-in-class reverse recovery charge (Qrr) Improved reverse diode dv/dt and dif/dt ruggedness Lowest FOM RDS(on)x Qgand EOSS Best-in-class RDS(on)/package combinations Benefits Best-in-class hard commutation ruggedness ...
3. SIC diode; SIC MOSFET Meirui's product line will help you achieve highly innovative and outstanding performance solutions, covering switched mode power supplies (SMPS), computing, motor control and drive, consumer electronics, mobile devices...
Phr. life ebbs, life fails, life hangs by a thread; one’s days are numbered, one’s hour is come, one’s race is run, one’s doom is sealed; Death knocks at the door, Death stares one in the face; the breath is out of the body; the grave closes over one; sic itur ad ...
In This paper, the current imbalance of the body diode of parallel connecter SiC-MOSFETs focusing on variations of parasitic inductance was analyzed by simulation, and confirmed by experiments. As a result, it was confirmed that the current imbalance can be suppressed by decreasing the parasitic ...
A non-invasive temperature sensing method for high-voltage SiC MOSFET chips based on the measurement of light emission during reverse conduction is proposed. The method is based on a compact sensing circuit that can be easily embedded in the package, allowing online temperature estimation. The effec...
<div p-id="p-0001">Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and n