The dynamic characteristics of 4 H -SiC p + – p – n 0 – n + diodes are experimentally studied in the pulsed modes characteristic of the operation of drift step recovery diodes (DSRD-mode). The effect of the
Department of Microelectronics and Information TechnologyElsevier LtdSolid State ElectronicsL-M. Hillkirk, "Dynamic surface temperature measurements in SiC epitaxial power diodes performed under single-pulse self-heating conditions", Solid-State Electronics, vol. 48, pp. 2181-2189, 2004....
For an accurate TCAD (Technology computer-aided design) modeling of device characteristics, a reliable technique for the characterization of trap-states must be developed. Such characterization is normally carried out through current transient measurements4, and trap parameters are typically extracted under...
pulsewidths ranging from 0.1 to 20 mus 4H-SiC diodes with and without elementary screw dislocations exhibited positive temperature coefficient of breakdown voltage and high junction failure power densities approximately five times larger than the average failure power density of reliable silicon pn ...
Barber et al., “Comparison of Nal(Tl), CdTe, and Hg12 surgical probes: Physical characterization,” Med. Phys. 18 (3), pp. 373-381 (May/Jun. 1991). Berthold et al., “Method for in-situ detection of tritium in water,” McDermott Technology Inc./RDTPA 99-03, pp. 1-9 (Sep...
Static and dynamic characterization of large-area high-current-density SiC Schottky diodesSummary form only given. SiC devices offer potential advantages in power switching applications due to their wide band gap and higher breakdown field compared to silicon. It is widely felt that the first ...
Dynamic Electrical Characteristics of 4H-SiC Drift Step Recovery Diodes of High Voltagedoi:10.1109/TPS.2022.3164752Drift step recovery diode (DSRD)dynamic characteristicspulsed powersilicon carbide (SiC)In order to evaluate the prospects of high-voltage (HV) silicon carbide (SiC) drift step recovery ...
6.5 kV SiC MOSFETBody diodeSchottky barrier diodeDynamic performanceFor a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET), both the body diode of the MOSFET and an anti-parallel diode can function as a freewheeling diode that carries reverse current. Selecting a ...
Gladish, "Static and dynamic characterization of large area high current density SiC Schottky diodes," IEEE Trans. Elec- tron Devices, vol. 48, pp. 349-352, Feb. 2001.Morisette D T;Cooper J A;Mellochm R;.Static and Dynamic Characterization of Large Area High Current Density Si C Schottky...
The low temperature (77 K) transient switch-on characteristics of 4 H -SiC p + – n –– n + diodes are measured in the pulse mode. Using a simple analytical model, the effect of impurity breakdown in a heavily doped p + -type emitter on the current rise dynamics after applying high...