关于Twisted Bilayer Graphene (TGB)的哈密顿量推导,可直接参看Bistritzer和MacDonald在PNAS上的原文。更详细的推导可以参照发表在Wiley Online Library上的Handbook of Graphene Set-Vol8-chapter6。(其第八卷第六章也即里斯本大学的G.Catarina的硕士毕业论文)。总得来说在写TGB的哈密顿量时,有两个关键的点,一是...
Using highly efficient simulations of the tight-binding Bogoliubov-de Gennesmodel we solved self-consistently for the pair correlation and the Josephsoncurrent in a Superconducting-Bilayer graphene-Superconducting Josephsonjunction. Different doping levels for the non-superconducting link areconsidered in the...
这些低能的 tight-binding 计算的能带结构与 DFT 的计算一致。 考虑在 K点局域的能带细节,将 f(\vec{k})做二阶展开,f(\mathbf{k}) \approx-\sqrt{3} a\left(\xi p_x-i p_y\right) / 2 \hbar+a^2\left(\xi p_x+i p_y\right)^2 / 8 \hbar^2(\xi表示K的正负号),解得 E=±\varep...
Elower:(double)the lower energy limit for which the NEGF is computed in the graphene bilayer. dE:(double)the energy step computed when solving the NEGF thop:(double)the hopping parameter of the pztight-binding Hamiltonian between two in-plane carbon atoms. ...
b Band structure of bilayer graphene in an energy (E) range of −2 mV to +2 mV at zero electric displacement field (D = 0) calculated with a tight binding model including various subsets of hopping parameters and on-site parameter Δ’, featuring four Dirac cones of different ...
Flat bands in slightly twisted bilayer graphene: tight-binding calculations. Phys. Rev. B 82, 121407 (2010). Article ADS Google Scholar Cao, Y. et al. Correlated insulator behaviour at half-filling in magic-angle graphene superlattices. Nature 556, 80–84 (2018). Article ADS Google Scholar...
A transformation of the band structure in bilayer graphene (BLG) with relatively shifted layers has been studied in the framework of the tight-binding model. BLG is demonstrated to remain a zero-gap material in the whole range of experimentally attainable shifts, but the positions of contact ...
We derive an {\em ab initio} $\pi$-band tight-binding model for $AB$ stacked bilayer graphene based on maximally localized Wannier wave functions (MLWFs) centered on the carbon sites, finding that both intralayer and interlayer hopping is longer in range than assumed in commonly used phenom...
Flat bands in slightly twisted bilayer graphene: Tight-binding calculations The presence of flat bands near Fermi level has been proposed as an explanation for high transition temperature superconductors. The bands of graphite are ... E.,Suárez,Morell,... - 《Physical Review B》 被引量: 66...
In this paper, the electrical characteristics of vertical tunneling bilayer graphene field effect transistor (VTBGFET) are theoretically investigated. We evaluate the device behavior using nonequilibrium Green's function (NEGF) formalism combined with an atomistic tight binding model. By using this ...