The growth and electronic structure of bilayer graphene (gr) on different substrates have attracted a lot of attention in the last years owing to the possibility of tuning the band gap in the electronic spectrum for the graphene 蟺 states around the K point. In the present study, the ...
| 近日,上海科技大学物质科学与技术学院拓扑物理实验室陈宇林-陈成团队利用纳米角分辨光电子能谱(Nano-ARPES)技术,发现了超导魔角石墨烯中显著的谷间-电声子耦合效应,并且确定了相应的声子模式。相关研究成果以“Strong Electron-Phonon Coupling in Magic-Angle Twisted Bilayer Graphene ”(双层魔角石墨烯中的强电子-...
Gaps induced by inversion symmetry breaking and second-generation dirac cones in graphene/hexagonal boron nitride. Nat. Phys. 12, 1111–1115 (2016). Article Google Scholar Razado-Colambo, I. et al. Nanoarpes of twisted bilayer graphene on sic: Absence of velocity renormalization for small ...
The electronic and optical response of Bernal stacked bilayer graphene with geometry modulation and gate voltage are studied. The broken symmetry in sublattices, one dimensional periodicity perpendicular to the domain wall and out-of-plane axis introduce
The atomic-thick anticorrosion coating for copper (Cu) electrodes is essential for the miniaturisation in the semiconductor industry. Graphene has long been expected to be the ultimate anticorrosion material, however, its real anticorrosion performance i
Selection rules and interference effects in angle resolved photoemission spectra from twisted graphene bilayers are studied within a long wavelength theory for the electronic structure. Using a generic model for the interlayer coupling, we identify features in the calculated ARPES momentum distributions ...
Measurements of ARPES showed directly the variation of the electronic structure of BLG10–15, but such experiments have focused mostly on epitaxial graphene grown on SiC. In graphene grown on the Si-face of SiC, charge transfer between the substrate and graphene shifts the Fermi level (EF) ...
25pAC-8 Electronic structure of Rb-doped bilayer graphene studied by ARPES 喜欢 0 阅读量: 5 作者:Kleeman,J.,Kanetani,K.,Sugawara,K.,Sato,T.,Takahashi,T.年份: 2012 收藏 引用 批量引用 报错 分享 求助全文 通过文献互助平台发起求助,成功后即可免费获取论文全文。 请先登入...
We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons. 关键词: Condensed Matter - Materials Science DOI: 10.1103/PhysRevB.80.045418 被引量: 12 年份: 2009 ...
Measurements of ARPES showed directly the variation of the electronic structure of BLG10–15, but such experiments have focused mostly on epitaxial graphene grown on SiC. In graphene grown on the Si-face of SiC, charge transfer between the substrate and graphene shifts the Fermi level (EF) ...