本发明公开了一种P型碲化铋基块体热电材料(Bi1xSbx)2Te3的制备方法,它是将单质原料Bi,Sb,Te粉末按(Bi1xSbx)2Te3化学式含量称重后装入石英管中,均化2h后抽真空封管,将其固定在垂直凝固炉的垂直升降架上;石英管随垂直升降架以2cm/h的速率竖直下降进入垂直凝固炉的加热区,当石英管中的物料全部通过加热区后,...
Substitution-induced spin-splitted surface states in topological insulator (Bi1-xSbx)2Te3. Sci. Rep. 2015, 5, 8830. [CrossRef] [PubMed]He, X., Li, H. & Wu, K. Substitution-induced spin-splitted surface states in topological insulator (Bi1-xSbx)2Te3. Sci. Rep. 5, 8830 (2015)....
Inspired by this idea, we conceived a new route for engineering the band structure of TIs by fabricating alloys of Bi2Te3 and Sb2Te3. Both TIs are V–VI compounds with the same crystal structure and close lattice constants7, making it ideal to form (Bi1 − xSbx)2Te3 ter- nary ...
Pulsed electrodeposition of (Bi1-xSbx)2Te3thermoelectric thin filmsbismuth antimony tellurideelectrodepositionpulsed techniquethermoelectric propertiesthin films(Bi 1-x Sb x ) 2 Te 3 thermoelectric thin films were deposited on stainless steel discs in 1 M perchloric acid and 0.1 M tartaric acid by ...
Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1xSbx)2Te3 来自 NCBI 喜欢 0 阅读量: 64 作者:C Niu,Y Dai,Y Zhu,Y Ma,L Yu,S Han,B Huang 摘要: The bulk-insulating topological insulators with tunable surface states are necessary for applications in ...
M. Stolzer, " Crystalline structure and thermoelectric properties versus growing conditions of sputtering-deposited (Bi1-xSbx)2Te3 films with 0< x < 0.85... Stolzer,M.,Bechstein,... - International Conference on Thermoelectrics 被引量: 0发表: 1997年 Preparation and some physical properties of ...
To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1 À xSbx)2Te3 ...
For the first time the anisotropy of reflectivity of polarized infrared light of p-(Bi1–xSbx)2Te3 single crystals (0.5 ≦ x ≦ 1) is given in the wave number range of 300 to 4000 cm−1. In addition to the excitation of free carriers in the reflection spectra of the mixed crystals...
Formation of (Bi0.25Sb0.75)2Te3alloy powder was completed by mechanical alloying for 5 hours at ball- to-material ratio of 5: 1, and processing time for (Bi1−xSbx)2Te3formation increased with Sb2Te3content x. When (Bi0.25Sb0.75)2Te3was hot pressed at temperatures ranging from 300°C...
Thermal Conductivities of (Bi1-xSbx)2Te3 and Bi2(Te1-ySey)3 Compounds Thermal conductivity of the semiconducting compounds (Bi1-xSbx)2Te3 and Bi2(Te1-ySey)3 is measured in the cleavage planes in the temperature range of 90300... K Yokota,S Katayama - 《Japanese Journal of Applied ...