本发明公开了一种P型碲化铋基块体热电材料(Bi1xSbx)2Te3的制备方法,它是将单质原料Bi,Sb,Te粉末按(Bi1xSbx)2Te3化学式含量称重后装入石英管中,均化2h后抽真空封管,将其固定在垂直凝固炉的垂直升降架上;石英管随垂直升降架以2cm/h的速率竖直下降进入垂直凝固炉的加热区,当石英管中的物料全部通过加热区后,...
Realization of tunable Dirac cone and insulating bulk states in topological insulators (Bi1xSbx)2Te3 来自 NCBI 喜欢 0 阅读量: 64 作者:C Niu,Y Dai,Y Zhu,Y Ma,L Yu,S Han,B Huang 摘要: The bulk-insulating topological insulators with tunable surface states are necessary for applications in ...
Lecuire, Pulsed electrodeposition of (Bi1-xSbx)2Te3 thermoe- lectric thin films, J. Appl. Electrochem., 36(2006), p.449.Doriane Del Frari, Sevastien Diliberto, Nicolas Stein, Clotilde Boulanger, and Jean-Marie Lecuire. Pulsed electrodeposition of (Bi1-xSbx)2 Te3 thermoelectric thin ...
ARTICLE Received 29 Jun 2011 | Accepted 3 Nov 2011 | Published 6 Dec 2011 DOI: 10.1038/ncomms1588 Band structure engineering in (Bi1 − xSbx)2Te3 ternary topological insulators Jinsong Zhang1,*, Cui-Zu Chang1,2,*, Zuocheng Zhang1, Jing Wen1, Xiao Feng2, Kang Li2, Minhao Liu1, ...
We grew 3D TI thin films of (Bi1 À xSbx)2Te3 (x ¼ 0.84 and 0.88; both 8 nm thick) using molecular beam epitaxy (MBE)19 and insulating InP (111) substrates. The EF of as-grown film was tuned near to the a Ti/Au b Ti/Au gate AlOx 23 nm (Bi1–xSbx)2Te3 8 nm InP...
(Bi1‐xSbx)2Te3 (BST)capacitance hysteresiscapacitance measurementslow temperaturestopological insulatorsCapacitance﹙oltage (C–V) traces in n‐typeBi1﹛Sbx)2Te3/oxide/metal capacitor structures using an AC capacitance bridge are investigated. By tuning the top gate voltage (Vtg) from positive to ...
The magneto-Seebeck effect in a transverse magnetic field is investigated in n-type (Bi1xSbx)2 Te3 mixed crystals (0 ≦ x ≦ 0.5; 20 K T 130 K) in order to evaluate electronic parameters from the saturation of the thermoelectric power α (∞) at high magnetic fields. In addition magn...
Valence Band Structure of (Bi1–xSbx)2Te3 Single Crystals For the first time the anisotropy of reflectivity of polarized infrared light of p-(Bi1- x Sb x )2Te3 single crystals (0.5 x 1) is given in the wave number range of 300 to 4000 cm-1. In addition to the excitation of free...
One of the well-known and widely used methods for the energy shift of the Dirac cone for Bi2Te3-based TIs [21] is the replacement of some Bi atoms by Sb atoms, which introduce the hole type of conduction in TIs. The (Bi1 – xSbx)2Te3 compound retains its topological properties in ...
Pan, Y.; Wang, Q.Z.; Yeats, A.L.; Pillsbury, T.; Flanagan, T.C.; Richardella, A.; Zhang, H.; Awschalom, D.D.; Liu, C.X.; Samarth, N. Helicity dependent photocurrent in electrically gated (Bi1-xSbx)2Te3 thin films. Nat. Commun. 2017, 8, 1037. [CrossRef] [PubMed]...