Bi2-xSbxTe3三元拓扑绝缘体/四元拓扑绝缘体Bi2-xSbxTe3-ySey (BSTS) 西安齐岳生物科技有限公司*营的产品种类包括有:合成磷脂、拓扑绝缘体,石墨炔(graphyne)多肽、高分子聚乙二醇衍生物、嵌段共聚物、胆固醇修饰产品,磁性纳米颗粒、纳米金及纳米金棒、近红外荧光染料、MAX相陶瓷,活性荧光染料、发光材料、石墨烯、金...
采用电化学控电位沉积的方法制备了Bi2-xSbxTe3温差电材料薄膜.通过ESEM,XPS,XRD,EDS等方法对电沉积薄膜的形貌,结构和组成进行了研究,并测试了在不同电位下制备的Bi2-xSbxTe3薄膜的温差电性能.研究结果表明,在含有Bi3+,HTeO+2和SbO+的溶液中,采用控电位沉积模式,可实现铋,锑,碲三元共沉积,生成锑掺杂的Bi2T...
www.nature.com/scientificreports OPEN Enhancement in surface mobility and quantum transport of Received: 5 June 2018 Accepted: 9 November 2018 Published: xx xx xxxx Bi2−xSbxTe3−ySey topological insulator by controlling the crystal growth conditions Kyu-Bum Han1, Su Kong Chong2, ...
(a) Crystal structure of Bi2-xSbxTe3-ySey. Green, purple and yellow circles represent Se, Bi/Sb and Te/Se atoms, respectively. (b) Photon energy dependence of the ARPES intensity around theΓ point for Bi2Te2Se (x = 0, y = 1) measured at hν = 46, 50, 54 and...
The structure, electrophysical and deformational properties of (Bi, Sb)2Te3 polycrystalline films with anomalous strain-sensitivity (K ∼ 104) were investigated. The presence of empty interleaves between conductive regions crossing current lines was established. An account of the peculiarities of tempe...
采用电化学控电位沉积的方法制备了Bi2-xSbxTe3温差电材料薄膜.通过ESEM、XPS、XRD、EDS等方法对电沉积薄膜的形貌、结构和组成进行了研究,并测试了在不同电位下制备的Bi2-xSbxTe3薄膜的温差电性能.研究结果表明,在含有Bi3+、HTeO+2和SbO+的溶液中,采用控电位沉积模式,可实现
Bi2-xSbxTe3化合物2) BiSrCaCuO Bi2-x(Pb)xSr2Ca2Cu2Oy3) plant compound 植物化合物4) Bi2(Zn1/3 Nb2/3)2O7 Bi2(Zn1/3Nb2/3)2O75) Al2Si2Sr compounds Al2Si2Sr化合物6) sulfur compounds 硫化合物 1. The effect of sulfur compounds(including sulfur,sulfide,sulfite and sulfate...
Bi2–xSbxTe3(x=0–0.2) crystal growth with the zone-melting method.The crystal surface growth features confirm the layer growth mechanism.The optical band gap increasing with the antimony content in the range used.doi:10.1016/j.jcrysgro.2015.09.011Patel, M.M....
结晶取向的Bi2-xSbxTe3(x=1.5,1.6,1.7)的热电性能 结晶取向热电性能轴向压力脉冲电流周期性烧结法Hiroyuki Kitagawa等人采用脉冲电流烧结法并加上周期性压力(PCS—cyclic),制得结晶取向BiSbTe 材料,周期性单轴向压力为100MPa金属功能材料
et al. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3. Nat. Phys. 8, 459–463 (2012). 29. Tanabe, Y. et al. Electron and hole injection via charge transfer at the topological insulator Bi2-xSbxTe3-ySey organic molecule interface. J. Phys. Chem. C 118, ...