A semiconductor metal-oxide-semiconductor field effect transistor (MOSFET) transistor with increased on-state current obtained through intrinsic bipolar junction transistor (BJT) of MOSFET has been described. Methods of operating the MOS transistor are provided.Jin-Woo Han...
A new MOSFET circuit structure called the pseudo-BJT (PBJT) is proposed and analyzed in this work. This new structure mimics the function of the BJT, and it has advantages of smaller area and better process compatibility over the real BJT. The function of PBJT is verified to be similar ...
The floating body effect will cause the current curve of kink effect in the saturation region. In this paper, we have discussed the kink effect in different situations and the branchcut method was used to separate the current component into two parts: (1) the parasitic BJT current, (2) ...
描述与应用NPN通用放大器 这个装置是专为通用放大器和开关。 有用的动态范围扩展到100毫安作为开关 作为一个放大器100兆赫。
The safe operating area (SOA) of a switching transistor defines the current that can safely run through the transistor at a given voltage. The SOA is usually defined in the datasheet of BJT, MOSFET, or IGBT switching transistors. It is given as a plot of VCE(or VDSfor a F...
Email PDF Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting CONTENTS SEARCH Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting Trademarks 1Introduction 2Current Boost With BJT Totem Pole Stage 3Current Boost With Saturated MOSFET Totem Pole Stage 4...
Trans GP BJT NPN 12V 6.5A 4460mW Automotive 4Pin(3+Tab) SOT-89 T/R ZXTN25012EZTA Datasheet PDF Zetex TRANS NPN 12V 6.5A SOT89 ZXTN25012EFLTA Datasheet PDF Diodes Zetex Trans,NPN,Transistor,GP,12V 2A SOT23 ZXTN25012EFHTA Application Note Diodes Zetex ZXTN25012EFLTA Data...
Description & Applications P-CHANNEL 20V - 0.14 W - 2.2A SOT23-6L 2.7-DRIVE STripFET™ II POWER MOSFET APPLICATIONS DC-DC CONVERTERS BATTERY MANAGEMENT IN NOMADIC EQUIPMENT CELLULAR 描述与应用 P沟道20V - 0.14 W - 2.2A SOT23-6L 2.7驱动器的STripFET™II功率MOSFET 应用 DC-DC转换器 电池管理...
carbide SiC, gallium nitride GaN, wafer, substrate, packaging, testing, optoelectronic devices (light-emitting diode LED, laser LD, detector ultraviolet), power electronic devices (diodes, MOSFET, JFET, BJT, IGBT, GTO, ETO, SBD, HEMT, etc.), microwave and radio frequency devices (HEMT, MMIC...
20世纪60年代以后,电力电子器件经历了SCR(晶闸管)、GTO(门极可关断晶闸管)、BJT(双极型功率晶体管)、MOSFET(金属氧化物场效应管)、SIT(静电感应晶体管)、SITH(静电感应晶闸管)、MGT(MOS控制晶体管)、MCT(MOS控制晶闸管)、IGBT(绝缘栅双极型晶体管)、HVIGBT(耐高压绝缘栅双极型晶闸管)的发展过程,器件的更新促进了...