Summary This document is part of Subvolume E 'Ternary Compounds, Organic Semiconductors' of Volume 41 'Semiconductors' of Landolt-Brnstein - Group III Condensed Matter.doi:10.1007/10717201_931O. MadelungU. RösslerM. Schulz (ed.)Springer Berlin Heidelberg...
The dielectric function of thin‐film hydrogenated amorphous silicon (a‐Si:H) grown on fused silica at different substrate temperatures has been investigated by spectroscopic ellipsometry. An improved interpretation of the ellipsometric data is based on a tetrahedron model that takes into account the ...
Correlation effects and the density of states in amorphous silicon The evaluation of the density of gap states from the charge density measured in field-effect experiments is considered in terms of a model which incorporates electron correlation effects. Due to the positive Hubbard U a density of ...
We discuss the nature and density of defects in pure amorphous silicon, under the light of recent hydrogenation experiments. It is argued that a reliable measure of defect densities can be obtained by counting the number of hydrogen atoms that can be incorporated in a pure starting material by ...
It is proposed that hydrogen reactions near the growing surface control the structure of plasma-deposited amorphous silicon and its alloys. The model explains how the plasma influences the dangling bond density and silicon weak bond dist... Street,A R. - 《Mrs Online Proceeding Library Archive》...
solar cells/ electron trappingElectron deep-trapping mobility-lifetime (μτ) products were measured in a series of hydrogenated amorphous silicon (a-Si:H) specimens using the transient photocurrent charge-collection technique. A logarithmic dependence of the resulting μτ estimate upon the collection...
Effect of hydrogen on the density of gap states in reactively sputtered amorphous silicon 来自 dx.doi.org 喜欢 0 阅读量: 28 作者:T Tiedje,TD Moustakas,JM Cebulka 摘要: The density of states near midgap and the hydrogen content have been measured on a number of reactively sputtered a-SiH...
To compensate a large initial irreversible capacity (Qirr) of silicon electrode, a novel Li pre-doping technique using Li-naphthalene complex/tetrahydrofuran solutions was developed. Li was successfully doped to amorphous silicon nano-flake particles, and the doping level of Li was easily controlled ...
Changing of density of states in amorphous silicon nitride at degradation of its electric propertoes using soft X-ray spectroscopy 喜欢 0 阅读量: 31 作者:AI Agafonov,EP Domashevskaya,EN Desyatirikova,VN Seleznev,VA Terekhov,GG Eldarov
Directional nickel silicide-induced crystallization of amorphous silicon channel under high-density current stressing 来自 AIP Publishing 喜欢 0 阅读量: 43 作者:CH Yu,HH Lin,SL Cheng,LJ Chen 摘要: Ultrafast directional crystallization that combined the electric current stressing with metal-induced ...