The invention especially relates to an alpha-In2Se3 nano-grade flower-ball solvothermal synthesizing method. According to the method provided by the invention, oleic acid is adopted as a solvent, ascorbic acid is adopted as a reducing agent, and indium nitrate and selenium powder are subjected ...
12056-07-4 硒化铟(III) Indium(III) selenide (In2Se3) 99.99%-99.999% 粉末,块 12069-00-0 硒化铅(II) Lead(II) selenide (PbSe) 99.99%-99.999% 粉末,块 12058-18-3 硒化钼(IV) Molybdenum(IV) selenide 99.9%-99.99% 粉末 (MoSe2) CAS 号中文名英文名纯度规格1314-05-2 硒化镍(II) ...
In this work, we report linear and non-linear spectroscopic measurements of chemically-grown layered (from one to 37 quintuple layers) and bulk alpha-In2Se3 samples over a photon energy range of 1.0--4 eV, and compare with ab initio dens... ...
alpha-In2Se3 is one of the interesting 2D vdW materials for photodetectors because of the interrelated in-plane (IP) and out-of-plane (OOP) polarizations. It has been demonstrated that the polarizations can be used to regulate photoresponsivity of the alpha-In2Se3 nanoflakes based ...
Here, we fabricate a graphene/alpha-In2Se3 heterostructure by dropping alpha-In2Se3 dispersion onto the surface of few-layered graphene film and investigate its nonlinear optical responses. We show that the graphene/alpha-In2Se3 heterostructure has combined advantages of ultrafast relaxation (tau(1)...
Alpha-phase indium selenide (伪-In2Se3) is a ferroelectric semiconductor with spontaneous electric polarization. Here, we report an experimental demonstration of the BPV effect in 伪-In2Se3 films along the out-of-plane direction by utilizing graphite films as transparent electrodes. A short-circuit...
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ\nferroelectric semiconducting thin crystals of {\\alpha}-In2Se3 as the channel\nmaterial as opposed to the gate dielectric in conventional ferroelectric FETs\n(FeFETs) were prepared and measured from room to the liquid-...
12056-07-4 硒化铟(III) Indium(III) selenide (In2Se3) 99.99%-99.999% 粉末,块 12069-00-0 硒化铅(II) Lead(II) selenide (PbSe) 99.99%-99.999% 粉末,块 12058-18-3 硒化钼(IV) Molybdenum(IV) selenide 99.9%-99.99% 粉末 (MoSe2)
Devices showed two distinct detection peaks in spectral responsivity, one at 365 nm and another at 850 nm, corresponding to band edges of GaN and {\\alpha}-In2Se3 respectively, with considerable rejection in visible spectrum. Normalised responsivity values were found out to be ~70 mA/W at ...
2D semiconducting alpha-In2Se3 single crystals: Growth and huge anisotropy during transportalpha-In2Se3 single crystalAnisotropyTransport propertiesUsing the temperature gradient method, alpha-In2Se3 single crystals were successfully grown. Samples prepared using this method exhibited good crystallinity and ...