H. Okumura et al. “Temperature dependence of electrical characteristics of Si-implanted AlN layers on sapphire substrates” Appl. Phys. Exp. 16 064005 (2023) 转载于公众号【ACT化合物半导体】 (以上文章系转载,如有涉及版权等问题,请联系我们以便处理) END...
A. Mamum et al. Appl. Phys. Express 16 061001 (2023) 原文转载于公众号【ACT化合物半导体】 (以上文章系转载,如有涉及版权等问题,请联系我们以便处理) END 奥趋光电 全球领先的AlN衬底/模板专家 World leading expert on AlN substrates / templates...
《半导体芯科技》（Silicon Semiconductor China, SiSC）是面向中国半导体行业的专业媒体，已获得全球知名杂志《Silicon Semiconductor》的独家授权；本刊针对中国半导体市场特点遴选相关优秀文章翻译，并汇集编辑征稿、国内外半导体行业新闻、深度分析和权威评论、产品聚焦等多方面内容。由雅时国际商讯（ACT International）以简体...
苏州会议 雅时国际(ACT International)将于2023年5月23-24日,在苏州组织举办主题为“2023-半导体先进技术创新发展和机遇大会”。会议包括两个专题:半导体制造与封装、化合物半导体先进技术及应用。分别以“CHIP China晶芯研讨会”和“化合物半导体先进技术及应用大会”两场论坛的形式同时进行。详情点击链接查看:https://...
heat sink, increase the contact area between them, and achieve better heat dissipation effect. 2. Nano-inorganic ceramic automotive lubricating oil and anti-wear agent The nano-aluminum nitride ceramic particles in the nano-ceramic engine oil act on the metal surface of the friction pair inside ...
The F(H) atoms in F(H)AlNH bonded with Al act as electron acceptors whereas the H atoms bonded with N are electron donors. Some vibrational modes of these two functionalized systems differ significantly although their structures are similar. Functionalization with the H and F atoms reduces the...
公告[Amend]Registration statement under Securities Act of 1933 绿润集团资讯 08-07 07:16 4990 0 公告Current report, item 5.07 绿润集团资讯 07-07 06:30 5005 0 公告Other definitive proxy statements 绿润集团资讯 05-01 05:09 5135 0 公告Initial statement of beneficial ownership of securities ...
Alnylam Forward Looking Statements This press release contains forward-looking statements within the meaning of Section 27A of the Securities Act of 1933 and Section 21E of the Securities Exchange Act of 1934. All statements other than historical statements of fact regarding Alnylam’s expectations, ...
Indeed, it is worth mentioning that during its thickening the AlN buffer can progressively act as a diffusion barrier slowing down Ga thermal diffusion into the Si substrate. On the other hand, Si thermal diffusion into the insulating AlN buffer may only induce a negligible effect on electrical ...
Act. Passive Electron. Compon. 2015(1), 1–12 (2015). https://doi.org/10.1155/2015/651527 Article CAS Google Scholar J. Xia, S. Wang, L. Tian, W. Zhang, H. Xu, J. Wan, C. Wan, Y. Pan, F. Yang, Al(ON) gate dielectrics for 4H-SiC MOS devices. J. Cryst. Growth 532...