P. G. Neudeck et al. “Demonstration of 4H-SiC Digital Integrated Circuits Above 800 ° C” IEEE Elec. Dev. Lett. 38 1082 (2017) H. Okumura et al. “AlN metal–semiconductor field-effect transistors using Si-ion implantation” Jpn. J. Appl. Phys. 57 04FR11 (2018) J. Lemettinen e...
Act. Passive Electron. Compon. 2015(1), 1–12 (2015). https://doi.org/10.1155/2015/651527 Article CAS Google Scholar J. Xia, S. Wang, L. Tian, W. Zhang, H. Xu, J. Wan, C. Wan, Y. Pan, F. Yang, Al(ON) gate dielectrics for 4H-SiC MOS devices. J. Cryst. Growth 532...
The year 2018 did not yield any breakthrough amendments to the Act on Museums. Those adopted were essentially meant to either adjust or complement the existing acts, and were adopted as the consequence of the amendments to other laws. However, the Act on Organizing...
Indeed, it is worth mentioning that during its thickening the AlN buffer can progressively act as a diffusion barrier slowing down Ga thermal diffusion into the Si substrate. On the other hand, Si thermal diffusion into the insulating AlN buffer may only induce a negligible effect on electrical ...
and commercialization of ALN-HSD, Alnylam’s aspiration to become a leading biotech company, and the planned achievement of its “Alnylam P5x25" strategy, constitute forward-looking statements for the purposes of the safe harbor provisions under T...
This will explain the observation on what happens when two surfaces inter- act. The interfacial interactions are expected to change the charge distribution between surfaces, which result in charge transfer across the heterostructures. In order to explore the charge transfer process in the C4H6N6...
By incorporating reinforcement particles into Mg alloys, strength has been observed to increase since reinforcement particles act as obstacles to dislocations. However, the increase in strength is normally at the expense of ductility. In this study, different percentages of nanosized AlN particles are ...
Li2Sn, AlN and InN act as electron donors and acceptors, respectively. The electron of AlN and InN will be transfered and the surface structures will be altered during the adsorption process. When LiPS molecules are adsorbed on AlN or InN surfaces, the Li atoms will transfer electrons to ...
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其实,艺术家是用超现实的艺术手法,来创造深刻的情感共鸣,画中的女孩所经历的扭曲和转变,真是我们生命中关键时候的内心状态。生活有时总是超出我们的预料,而我们每个人都经历过绝望,Johnston在画面中制造强烈的矛盾和冲突,就是要让我们真切地感受自身命运的复杂性和内心的脆弱感。