GUIDELINE FOR CHARACTERIZATION OF INTEGRATED CIRCUITS AEC - Q003 July 31, 2001Component Technical CommitteeAutomotive Electronics CouncilUpper SpecLower SpecProcessWindow Device Parameter (at one test temperature)FrequencyBetaBase Rs (ohms /sq)Matrix CellTest LimitEach dot is ameasurementfrom one partGuar...
AEC-Q003 July31,2001 ComponentTechnicalCommittee AutomotiveElectronicsCouncil Upper Spec Lower Spec Process Window DeviceParameter (atonetesttemperature) F r e q u e n c y Beta B a s e R s ( o h m s / s q ) MatrixCell TestLimit ...
Q102-003标准颁布的目的是在AEC-Q104多芯片模组的基础上对含光电多芯片模组的实际测试细节进行规范指导,满足目前逐渐增加的光电模组的认证需求。主要面向的对象是矩阵前照灯、智能RGB led及红外传感器(重点是激光雷达模组)等产品。 认证范围 AEC-Q102-003中定义的OE-MCMs是由至少包含一种光电器件的多个有源或无源...
主要面向的对象是矩阵前照灯、智能RGB led及红外传感器(重点是激光雷达模组)等产品。 认证范围 AEC-Q102-003中定义的OE-MCMs是由至少包含一种光电器件的多个有源或无源器件组成,这些子组件通过焊接或胶粘方式相互连接到线路板上构成复杂电路封装在单个多芯片模组内。构成模组内的子组件可以是封装(例如塑封)和/或者...
AEC-Q003 芯片产品的电性能表现特性的指导原则 AEC-Q004 零缺陷指导原则(草稿) AEC-Q005 无铅需求 SAE J1752/3 集成电路辐射测量流程 编者注:上面5个AEC-Q文件,并非Q100的附件,而是AEC认证的附件,需要单独在官网下载。 1.2.2 军工等级标准 MIL-STD-883 微电子测试方法和流程 ...
AEC_Q003 AEC - Q003 July 31, 2001 Component Technical Committee Automotive Electronics Council
AEC - Q003 Rev - 集成电路产品电气性能鉴定指南Guidelines for Characterizing the Electrical Performance of Integrate.pdf,AEC - Q003 July 31, 2001 ) Process q s Window / s Matrix Cell m h o ( s R e s a B Beta Lower Upper Spec Spec y c n e u q e r F Device P
sample size要考虑到confidence interval:置信区间和confidence level:置信水平,这两个是统计用语,sample size的确认要考虑到这两个参数的要求吗? 4.3 Characterization Report The characterization report should include the following: 特征参数报告应该包括:
AEC - Q003 July 31, 2001 Base Rs (ohms /sq) Process Window Matrix Cell Beta Lower Spec Frequency Upper Spec Device Parameter (at one test temperature) 2 GUIDELINE FOR CHARACTERIZATION OF INTEGRATED CIRCUITS Each dot is a measurement from one part Test Limit P a r a 2 e t e r ...
参考文件是MIL-STD883 Method 2011和AEC Q003; 附加需求: 条件C或D。对于直径 ≥ 1mil的金线,TC后最小拉力拉力强度要 = 3克。对于金线直径<1mil,参照MIL-STD-883 Method 2011中的图2011-1最小拉强度的指导原则。对于Au线径<1mil,线键拉应在球键上方,而不是在中线处。