In this study, we propose and experimentally demonstrate a picosecond pulse laser at 850 nm. To generate picosecond laser pulse, we operate a vertical cavity surface emitting laser under a gain-switched pulsed mode, which is realized by driving it with our home-made drive circuit based on ...
In this study, we propose and experimentally demonstrate a picosecond pulse laser at 850 nm. To generate picosecond laser pulse, we operate a vertical cavity surface emitting laser under a gain-switched pulsed mode, which is realized by driving it with our home-made drive circuit based on ...
850 nm 10 W TO-Can Pulse-Mode Laser- High Power, Compact- Wide Temp. Range OSRAM Laser Diodes 850 nm 0.005 W Turn-Key Module Superluminescent LED EXTENDED BANDWIDTH Superlum 850 nm 0.01 W Turn-Key Module Superluminescent LED EXTENDED BANDWIDTH Superlum 850 nm 0.015 W Turn-Key Module Sup...
Laser Controller Dimensions (cm) 44(w) x 42(d) x 9(h); 2U 19” rackmount Cooling Air cool with low noise fan 920nm 高功率 飞秒光纤激光器,920nm 高功率 飞秒光纤激光器(850nm,960nm可选) 920nm 高功率 飞秒光纤激光器信息由上海昊量光电设备有限公司为您提供,如您想了解更多关于920nm 高功率...
[ 8 ] Dittmar F,Klehr A,Sumpf B ,et a1.9 W output power from an 808 nnl tapered diode laser in pulse mode operation with near1v diffraction—limited beam quality [J ] .IEEE Quantum Electronics,2007 ,13(5 ) :l 194一l 199.
3.Frequency pulse light, preset 147-4625hz treatment program, preset timer 4.Powerful core LED with lens, High irradiance optical powerful Detailed Photos Product effect The function of 660nm red light:There is an abundance of literature outlining the benefits ...
Pulse Width 6ns Origin China Packaging & Delivery Package Size 30.00cm * 20.00cm * 10.00cm Package Gross Weight 1.000kg Product Description 10W 850nm VCSEL TO-Mount Diode Vertical Cavity Surface Emitting Laser Features: 850nm wavelength and 10W output Superio...
脉冲整形器 MODBOX PULSE SHAPER 光脉冲瞬时成型 脉冲宽度≥25ps 对比度≥40dB 对比度≥55dB(双阶系列) 1030nm、1053nm 、1064nm 、1550nm、2μm 激光光源 光放大器 AWG 前端机 MODBOX-LASER-FRONT-END 完整的前段激光系统,包括种子激光器、脉冲整形器、光纤放大器和光谱展宽单元 1030nm、1053nm 、1064nm ...
E mission spectra of tWO devices with pulse current of 1 0 00 mA at d ifferent temperatures 图5 为两种器件的半高宽随温度的变化。从 图中可以看出,在低于40 ℃时锥形器件光谱半高 宽为1.12 nm,比条形窄 0.12 nm。当温度继续升 高时,锥形器件光谱明显变宽 ,而条形器件光谱略 ...
(mm) 1.2±0.2 单脉冲能量 Single Pulse Energy (uJ) 1~40 光束椭圆度 Beam Roundness >90% 重复频率 Repetition (KHz) 可控 Controllable 1~5 出光孔高度 Aperture Position (mm) 27 不可控 Uncontrollable 5~100 激光器 Laser Head 尺寸 Dimensions (L×W×H, mm) 136 x 50 x 47 平均功率 Average ...