Section IV demonstrate the NCFET SRAM CiM cell design for input-weight product operation and performance benchmarking with baseline CMOS CiM cell design. Finally, the conclusions are offered in Section V. Access through your organization Check access to the full text by signing in through your ...
AComparativeStudyof6T,8Tand9TSramCellDeepakAggarwalStudent,BRCMCollege,BahalPraveenkaushikStudent,ManavBhartiUniversity,SolanNarende..
类似零件编号 - GS832018T-150IV 制造商 部件名 数据表 功能描述 GSI Technology GS832018T-150I 669Kb / 25P 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs More results 类似说明 - GS832018T-150IV 制造商 部件名 数据表 功能描述 GSI Technology GS8321E18E 994Kb / 34P 2M ...