We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS2 using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inactive interlayer shear and the infrared active phonons. The no...
We theoretically investigate the mechanism of ferroelectric switching via interlayer shear in 3R MoS 2 using first principles and lattice dynamics calculations. First principle calculations show the prominent anharmonic coupling of the infrared inactive interlayer shear and the infrared active phonons. The...
Here, controllable vapor deposition growth of bilayer 3R MoS2is achieved. The ferroelectricity of as‐grown bilayer 3R MoS2is investigated via in situ atomic force probe technique. This work can be a big step toward industrial applications of 2D vdW ferroelectric memory. 展开 ...
These findings highlight the importance of managing domain walls, pinning centres and doping levels in sliding ferroelectric devices, offering insights for further development in sensing and computing applications.Liang, JingDepartment of Physics and Astronomy, The University of British Columbia, Vancouver,...
Although several van der Waals (vdW)-layered materials show ferroelectricity, the experimental demonstrations of ferroelectric behavior in monolayers are very limited. Here we report the observation of room-temperature out-of-plane switchable electric polarization in supported MoS2 monolayers exfoliate...