A D-stacked memory device including: a base die including a plurality of switches to direct data flow and a plurality of arithmetic logic units (ALUs) to compute data; a plurality of memory dies stacked on the base die; and an interface to transfer signals to control the base die.Mu-...
Meta 3D Stacked Memory Meta presented results with 3D packaged SRAM or DRAM atop compute (this is really compute-near-memory) along with a theoretical compute-in-memory accelerator for VR applications. Eliminating the need for off-chip memory access reduces both latency and energy consumption by 4...
NDC: Analyzing the impact of 3D-stacked memory+logic devices on MapReduce workloadsdoi:10.1109/ISPASS.2014.6844483Saleem, Muhammad Shamoon... MS Saleem,E Renault - NDC: Analyzing the impact of 3D-stacked memory+logic devices on MapReduce workloads 被引量: 0发表: 2013年 [IEEE 2014 IEEE Interna...
memory capacity with the best performance efficiency (a.k.a. performance improvement efficiency (PIE)) and proposes a cooperative cache memory (CCM), which prefetches adaptively according to the memory access pattern in order to exploit the massive memory bandwidth of a 3D stacked memory system. ...
DRAM存算（存内计算和近存计算）的过往，相关技术包括：Processing-In-Memory存内计算，智能DIMM，HMC、HBM、3D-Stacked DRAM与逻辑。Processing-In-Memory存内计算。有两种方式，一种是存储颗粒里面，采用DRAM器件在存储阵列旁边构建一个逻辑电路，早在1992年多伦多大学就提出了Computational RAM，加速了卷积和Data ...
接下来另一项关键技术则是3D Memory显存封装技术,其实在之前下代架构还是叫Volte的时候就有介绍过,这项技术是通过堆叠闪存(Stacked DRAM)并使用硅通孔(TSV)相连接,获得更大的带宽、容量以及更好的能耗,而且还会封装在GPU SoC上,大家可以在样卡上发现这一点。
为了解决此工艺复杂,堆叠难以压缩的难题,2012年海力士提出了SMArT (Stacked Memory Array Transistor)结构,如图7所示。器件结构也是垂直管状环栅结构,hk-金属后栅工艺,ONO电荷俘获,ONON(氧化硅/氮化硅)堆叠技术。创新之处在于ONO存储层在孔内部,同时多晶硅也不全部填满沟道,大约只有8nm左右的多晶硅,剩余的用氧化硅填充...
3D Stacked storage-class memory cells work a little different to flash. The easiest example here is 3D XPoint, which uses a phase change material to alter the resistance of a memory cell, and is accessed through an ovonic selector switch. The memory is built up through alternating the...
The additional cost due to redundancy pays off; the cost of producing a good 3D stacked memory chip reduces with 37.68 % when using layer redundancy and only with 12.48 % when using wafer matching. Moreover, the results show that the benefits of layer redundancy become extremely significant ...