根据 Yole《High End Performance Packaging 2022》,高端性能封装平台包括例如超高密度扇出型封装(UHD FO)、嵌入式硅桥(Embedded Si Bridge)、硅中介层(Si Interposer)、三维堆栈内存(3D StackMemory)以及 3D SoC 技术。嵌入式硅桥有两种解决方案:LSI(台积电)和 EMIB(英特尔)。硅中介层技术包括台积电的 CoWoS、三星...
AMD Instinct MI60:如上图。采用了HBM2的stack memory, 实际上第一个7nm GPU。通过堆叠,memory带宽1TB/s。堆叠了32GB HBM2上去。 NvidiaTesla P100:如上图。Nvidia自AI火起来以后推出的神卡。采用了HBM2的stack memory, 实际上第一个7nm GPU。通过堆叠,memory带宽1TB/s。堆叠了16GB HBM2上去。 FOVEROS:intel...
In 3D-DSP, we stack 512KB SRAM directly on top of the logic die which is heterogeneous multi-core computing platform for multimedia application purpose. The logic and memory dies are fabricated in the TSMC 90nmG 1P9M CMOS process. Finally, we use 3D-DSP EVB to demonstrate the performance...
今年8月6日,最大的NAND厂商Samsung Electronics公布开始量产SSD,此款SSD搭载了通过单堆栈(Single Stack)形成了136层Memory Through Hole(存储过孔)的256Gbit 3D NAND闪存。所谓136层的Memory Through Hole(存储过孔),在层数方面是历史最高值。除去Source Line、Dummy Word Line,存储单元(Memory Cell Storing)的字线...
includes forming a stack of alternating layers of a first material and a second material different from the first material over a substrate, forming a mask layer over the stack and patterning the mask layer to form at least on opening in the mask layer to expose a top layer of the stack....
The complete stack size is denoted by s = n + r. The following assumptions are made in this paper with respect to layer redundancy analysis: The memory layers in the stack are considered to be independent; each layer can be either faulty or non-faulty. Since many TSVs are ...
3D集成多适用于同类型芯片堆叠，将若干同类型芯片竖直叠放，并由贯穿芯片叠放的TSV相互连接而成，见下图。类似的芯片集成多用于存储器集成，如DRAM Stack和FLASH Stack。同类芯片的3D集成示意图：不同类别芯片进行3D集成时，通常会把两个不同芯片竖直叠放起来，通过TSV进行电气连接，与下面基板相互连接，有时还需在...
The only single-stack 3D memory die with a 100+ layer design Samsung’s sixth-generation V-NAND features the industry’s fastest data transfer rate, capitalizing on the company’s distinct manufacturing edge that is taking 3D memory to new heights. ...
HAMLeT uses a low-overhead hardware that exploits the existing infrastructure in the logic layer of 3D-stacked DRAMs, and does not require any changes to the DRAM layers, yet it can fully exploit the locality and parallelism within the stack by implementing efficient layout transform algorithms. ...
public class ObjectPool<T> where T : new(){private readonly Stack<T> _objects = new Stack<T>();public T Get(){return _objects.Count > 0 ? _objects.Pop() : new T();}public void Return(T obj){_objects.Push(obj);}}// 使用示例var pool = new ObjectPool<GameObject>();GameObject...