四、招标文件获取 1、购买招标文件时需携带的资料:投标人营业执照(复印件)、授权委托书(原件)及身份证(法定代表人参加的需携带法人证明书(原件)及身份证)、供货合同业绩(复印件)、在“信用中国”网站(www.creditchina.gov.cn)中未被列入失信被执行人的截图。以上资料复印件均需加盖公章;注:1、本项目为资格后审...
购买 样品申请 批量询价 交期查询 WM2A075120L 品牌:中电国基南方 品类:碳化硅场效应管 价格:￥32.2000 现货: 2 购买 样品申请 批量询价 交期查询 WM1A060065K 品牌:中电国基南方 品类:碳化硅场效应管 价格:￥42.0000 现货: 2 购买 样品申请 批量询价 交期查询 WM1A120065K 品牌:中电国基南方 品...
Qorvo's UF3C065040K3S 650 V, 42 mohm RDS(on) cascode SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best rever...
Specifications Support Material Related Products Technical Inquiry Part Number: UF3C065040B3 Manufacturer: Qorvo Voltage: 650 V Rds(on): 42 mΩ Current: 41 A Type: FET-Fast Configuration: Cascode Generation: Gen 3 Tj Max: 175 °C Qualification: AEC-Q101 Package: D2PAK-3L ...
1.助烧剂和造孔剂对真空烧结SiC多孔陶瓷性能的影响2.炭粉作造孔剂制备工艺对多孔羟基磷灰石陶瓷性能的影响3.造孔剂对氧化物结合SiC多孔陶瓷性能的影响4.造孔剂对SiC多孔陶瓷材料性能的影响5.造孔剂对氧化物结合SiC多孔陶瓷性能的影响 因版权原因,仅展示原文概要,查看原文内容请购买©...
SiC FET from Qorvo 650V/30mO,SICFET,G3,TO263-3 Status:Standard |Data Sheet:|RoHS Compliance: Overview Qorvo's UF3C065030B3 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device...
Specifications Support Material Related Products Technical Inquiry Part Number: UF3C065080B7S Manufacturer: Qorvo Voltage: 650 V Rds(on): 85 mΩ Current: 27 A Type: FET-Fast Configuration: Cascode Generation: Gen 3 Tj Max: 175 °C Qualification: JEDEC Package: D2PAK-7L ...