VNn30VN沟道ModeN沟道增强MODE模式 系统标签: 沟道enhancementmodechanneldrain增强 30VN-ChannelEnhancement-ModeMOSFETVDS=30VRDS(ON),Vgs@10V,Ids@5.8A=38mΩRDS(ON),Vgs@4.5V,Ids@5.0A=43mΩRDS(ON),Vgs@2.5V,IdsΩAdvancedtrenchprocesstechnologyHighDensityCellDesignForUltraLowOn-ResistanceMaximumRatings...
ZXMN3A01F 30V N-CHANNEL 提升模式 MOSFET 数据信息说明书 ZXMN3A01F Document number: DS33528 Rev.4 - 2 1 of 7 www.diodes.com January 2015 © Diodes Incorporated D S G 30V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET has been designed to minimize the on-...
ME60N03 30V N-Channel Enhancement Mode MOSFET 30V/60A 价格:0.57元 最小采购量:10 主营产品:集成电路(IC),国内IC全代理,方案设计 供应商:深圳市天玖隆科技有限公司 所在地:深圳市福田区鼎城国际大厦816.南山科技园南区高新南一道013号赋安科技大厦三层...
查询ZXMN3A02X8供应商 ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes ...
30V 35A N+N通道增强模式MOSFET-AP10H03DF 35A 30V PDFN3X3-8L.pdf,AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as
30V P-Channel Enhancement-Mode MOSFETsu:mosfetsu 30V的P沟道增强模式帮助 文档格式: .pdf 文档大小: 413.51K 文档页数: 3页 顶/踩数: 0/0 收藏人数: 0 评论次数: 0 文档热度: 文档分类: 论文--毕业论文 文档标签: 帮助 系统标签: 沟道enhancementchannelmodedrainleshan ...
VDD 1 VDD IAS 10% VGS Td(on) Tr Td(off) Tf Ton Toff VGS Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform 4 AP20N03D Rve3.8 臺灣永源微電子科技有限公司 5 V1 V2 Package Mechanical Data AP20N03D 30V N-Channel Enhancement Mode MOSFET E A Dimensions B2 C2 Ref...
AM4410-30V N -Channel Enhancement Mode MOSFET DataSheet General Description This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. ...
30V N-Channel Enhancement Mode Power MOSFET Fetures Applications Diode Power Management Switches WAYON-WMR12N03T1 Description :WMR12N03T1 uses advanced power trench technology that has been especially tailored to minimize the on-state resistance ...
型号 HYG110C03LR1C2 30V N+P MOSFET 8.8/22mΩ PDFN8L 深圳市汇友迪科技是华羿微-Huayi原厂指定代理商 HYG110C03LR1C2产品概述:Dual N-Channel Enhancement Mode MOSFET此器件 为30V N+P结构、8.8/22mΩ内阻、PDFN8L(5x6)双基岛岛封装产品,芯片采 用Trench工艺设计。该器件抗冲击能力强,适合较低开关...