9、开关速度快:MOSFET的开关速度和输入的容性特性的有很大关系,由于输入容性特性的存在,使开关的速度变慢,但是在作为开关运用时,可降低驱动电路内阻,加快开关速度(输入采用了后述的“灌流电路”驱动,加快了容性的充放电的时间)。MOSFET只靠多子导电,不存在少子储存效应,因而关断过程非常迅速,开关时间在10—100ns之...
NSID: PN2222N D/C1: D9842 SPEC REV: B2 SPEC: QTY: 10000 QA REV: FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B (FSCINT) F63TNR Label Customized Label 5 Reels per Intermediate Box TAPE and REEL OPTION See Fig 2.0 for various Reeling Styles LOT: CBVK741B019 FSID: PN222N D/C1: D9842 ...
2N7002中文资料(Diodes)中文数据手册「EasyDatasheet - 矽搜」
2N7002中文资料(fairchild)中文数据手册「EasyDatasheet - 矽搜」
t Turn-off time - - 20 GEN (OFF) VSD Diode forward voltage drop - 1.2 - V VGS = 0V, I SD = 200mA trr Reverse recovery time - 400 - ns VGS = 0V, I SD = 800mA Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300 μs pulse...
Vds=25v,RL=150ohm的时候 上升时间与下降时间都在50ns左右,但是技术手册上给出的数据确是1.2ns与3.6ns,出入很大 0 回复 ymyangyong 6 2014-09-12 10:01 @happymumu Vds=25v,RL=150ohm的时候上升时间与下降时间都在50ns左右,但是技术手册上给出的数据确是1.2ns与3.6ns,出入很大 驱动和外围元件达不到理想...
ns SOT-23 1.GATE 2.SOURCE 3.DRAIN * * * * * D,Apr,2012 *Theseparametershavenowaytoverify. Ω, Ω ParameterSymbolValueUnit Drain-SourceVoltageV DS 60V ContinuousDrainCurrentI D 0.115A PowerDissipationP D 0.225W ThermalResistancefromJunctiontoAmbientR ...
2N7000.SAM Rev. A1 These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable,and fast switching performance. They can be ...
2N7002 数据表 .pdf.pdf说明书 01-Jun-2002 Rev. A Page 1 of 5
VGS =0到10V - - - - 0.05 0.2 0.4 4.0 0.1 0.4 0.6 -V nC Ciss Coss C rss td(on) tr td(off) tf VDD =30V, VGS =10V, ID =0.5A, RG =6 Ω VGS =0V, VDS =25V, f =1兆赫 - - - - - - - 13 4.1 2.0 3.0 3.3 5.5 3.1 20 6 3 4.5 5 9 5 ns pF 值值 typ.max. Un...