Devices using hBN typically exhibit a sizable improvement in terms of SS54 and mobility11 and also show considerably reduced charge trapping compared to 3D oxides45,58. This can be explained by the well-defined surface of hBN and the low density of border traps in this crystalline material. ...
structure (Fig.5b). The delicate 3D structure has been further elaborated by the elemental mapping, which shows the alternative distribution of Pt, Ti, and MoS2in sequence (Fig.5c). Each representative layer of the MoS2memory stack can be accessible and programmable independently, exhibiting stable...
charge trappingelectrical memoryheterostructuresnonvolatileoptical memoryNonvolatile memory is an indispensable component of electronic devices.However, the current technology makes it difficult to satisfy the emerging bigdata demand. To circumvent the existing problems, herein, a first attempt ismade to ...
Amnesia is a common clinical disorder manifested by the loss of recent memory as well as global impairment in the ability to acquire new memories, which seriously affects normal life activities of humans. At present, although herbal intervention, protein synthesis inhibition, and hormone replacement ...
article databases and printed indexes, and Internet search tools to locate relevant and timely materials; distinguish between popular and scholarly sources and detect signs of bias, whether the material is in printed form or on the Internet; and quote and cite sources in a way that gives...
MoS2is a typical representative of the family of 2D TMDCS. So far it has been considered as one of the most favourable nanomaterials among all TMDCS as it has relatively small band gap of 1.29 eV and 1.90 eV for the bulk material and single layers, respectively [40,87,88]. Previously a...
3.2Charge Transport Properties in 2D Heterostructures Different band alignments result in a variety of charge transport characteristics accompanied by the process of energy transfer. On the one hand, the single-particle transportation, including interlayer tunneling effect and charge trapping phenomena, has...
Recently, black phosphorous (BP) has attracted significant interest because it is a single-component material like graphene and has high mobility, a direct band gap, and exhibits ambipolar transition behavior. This study reports on a charge injection memory field-effect transistor on a glass ...
Specifically, the semiconductor device may include a charge trapping layer with improved retention and speed for VNAND applications. The charge trapping layer may comprise an aluminum nitride (AlN) or aluminum oxynitride (AlON) layer.Pauline Calka...
METHOD OF DEPOSITING CHARGE TRAPPING POLYCRYSTALLINE SILICON FILMS ON SILICON SUBSTRATES WITH CONTROLLABLE FILM STRESSA semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxy...